Organic-Inorganic Hybrid Halide Perovskites for Memories, Transistors, and Artificial Synapses
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Jaeho | - |
dc.contributor.author | Han, Ji Su | - |
dc.contributor.author | Hong, Kootak | - |
dc.contributor.author | Kim, Soo Young | - |
dc.contributor.author | Jang, Ho Won | - |
dc.date.available | 2019-01-22T12:34:25Z | - |
dc.date.issued | 2018-10 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.issn | 1521-4095 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/655 | - |
dc.description.abstract | Fascinating characteristics of halide perovskites (HPs), which cannot be seen in conventional semiconductors and metal oxides, have boosted the application of HPs in electronic devices beyond optoelectronics such as solar cells, photodetectors, and light-emitting diodes. Here, recent advances in HP-based memory and logic devices such as resistive-switching memories (i.e., resistive random access memory (RRAM) or memristors), transistors, and artificial synapses are reviewed, focusing on inherently exotic properties of HPs: i) tunable bandgap, ii) facile majority carrier control, iii) fast ion migration, and iv) superflexibility. Various fabrication techniques of HP thin films from solution-based methods to vacuum processes are introduced. Up-to-date work in the field, emphasizing the compositional flexibility of HPs, suggest that HPs are promising candidates for next-generation electronic devices. Taking advantages of their unique electrical properties, low-cost and low-temperature synthesis, and compositional and mechanical flexibility, HPs have enormous potential to provide a new platform for future electronic devices and explosively intensive studies will pave the way in finding new HP materials beyond conventional silicon-based semiconductors to keep up with "More-than-Moore" times. | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Organic-Inorganic Hybrid Halide Perovskites for Memories, Transistors, and Artificial Synapses | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/adma.201704002 | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.30, no.42 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000447377200002 | - |
dc.identifier.scopusid | 2-s2.0-85047779641 | - |
dc.citation.number | 42 | - |
dc.citation.title | ADVANCED MATERIALS | - |
dc.citation.volume | 30 | - |
dc.type.docType | Article | - |
dc.publisher.location | 오스트리아 | - |
dc.subject.keywordAuthor | artificial synapses | - |
dc.subject.keywordAuthor | halide perovskites | - |
dc.subject.keywordAuthor | ion migration | - |
dc.subject.keywordAuthor | memory | - |
dc.subject.keywordAuthor | transistors | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | LEAD IODIDE PEROVSKITE | - |
dc.subject.keywordPlus | ORGANOMETAL TRIHALIDE PEROVSKITE | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | RESISTIVE SWITCHING MEMORIES | - |
dc.subject.keywordPlus | REDUCED BAND-GAP | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | SEQUENTIAL DEPOSITION | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
84, Heukseok-ro, Dongjak-gu, Seoul, Republic of Korea (06974)02-820-6194
COPYRIGHT 2019 Chung-Ang University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.