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Metal CMP 세정 공정에서 DHF 적용에 관한 연구Investigation on DHF Application at Metal CMP Cleaning Process
- Issue Date
- Apr-2003
- Publisher
- 한국전기전자재료학회
- Keywords
- DHF; Barrier metal; Oxide loss; Residue; Metal contamination
- Citation
- 전기전자재료학회논문지, v.16, no.7
- Journal Title
- 전기전자재료학회논문지
- Volume
- 16
- Number
- 7
- ISSN
- 1226-7945
- Abstract
- In this study, we evaluated the dilute HF cleaning to reduce residual defects made by metal CMP process. The purpose of this test is to observe the existence of barrier metal damage during DHF cleaning on condition that it should not affect metal thin film reliability, so we will get rid of slurry residual particles as a main defect of the metal CMP process for the better yield. In-line defect data showed us that slurry residual particles were removed by DHF application. The HF rinse significantly reduced metal contamination levels and surface roughness. The best effect by additional oxide loss was discovered when Dilute HF condition is 10".
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