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The effect of stoichiometric La1/2Sr1/2CoO3 as sputtered bottom electrode on SiO2/Si(100)

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dc.contributor.authorKim, J.-H.-
dc.contributor.authorKoh, K.S.-
dc.contributor.authorChoo, W.K.-
dc.date.accessioned2023-03-09T01:56:05Z-
dc.date.available2023-03-09T01:56:05Z-
dc.date.issued2003-04-
dc.identifier.issn0374-4884-
dc.identifier.issn1976-8524-
dc.identifier.urihttps://scholarworks.bwise.kr/cau/handle/2019.sw.cau/65720-
dc.description.abstractIn this study, we have investigated the ferroelectric and electrical properties of PZT 40/60 films on bottom La1/2Sr1/2CoO3(LSCO) electrode. Also, to investigate LSCO as the bottom electrode, this LSCO thin film was sputtered on SiO2/Si(100) wafer with several LSCO target compositions. As excess Co or Sr is added to the LSCO target, the resistivity of the LSCO thin film has achieved the minimum value with the 5 at% Co and Sr excess target. For the ferroelectric properties, this particular capacitor with the aforementioned electrode shows better properties than others with the LSCO bottom electrodes deposited with different LSCO target compositions.-
dc.language영어-
dc.language.isoENG-
dc.titleThe effect of stoichiometric La1/2Sr1/2CoO3 as sputtered bottom electrode on SiO2/Si(100)-
dc.typeArticle-
dc.identifier.bibliographicCitationJournal of the Korean Physical Society, v.42, no.SUPPL., pp S1313 - S1316-
dc.description.isOpenAccessN-
dc.identifier.scopusid2-s2.0-26344477485-
dc.citation.endPageS1316-
dc.citation.numberSUPPL.-
dc.citation.startPageS1313-
dc.citation.titleJournal of the Korean Physical Society-
dc.citation.volume42-
dc.type.docTypeConference Paper-
dc.publisher.location대한민국-
dc.subject.keywordAuthorFerroelectric properties-
dc.subject.keywordAuthorLSCO-
dc.subject.keywordAuthorPZT-
dc.subject.keywordAuthorSputtering-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
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