핫 캐리어 신뢰성 개선을 위한 새로운 LDD 구조에 대한 연구

Abstract

The hot carrier degradation in a metal oxide semiconductor device has been one of the most serious concerns for MOS-ULSI. In this paper, three types of LDD(lightly doped drain) structure for suppression of hot carrier degradation, such as decreasing of performance due to spacer-induced degradation and increase of series resistance will be investigated. in this study, LDD-nMOSFETs used had three different drain structure, (1)conventional surface type LDD(SL), (2)Buried type LDD(BL), (3)Surface implantation type LDD(SI). As experimental results, the surface implantation type LDD structure showed that improved hot carrier lifetime to comparison with conventional surface and buried type LDD structures.