Nondestructive one-dimensional scanning capacitance microscope dopant profile determination method and its application to three-dimensional dopant profiles
DC Field | Value | Language |
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dc.contributor.author | Kang, ES | - |
dc.contributor.author | Kang, JW | - |
dc.contributor.author | Hwang, HJ | - |
dc.contributor.author | Lee, JH | - |
dc.date.accessioned | 2023-03-09T03:48:18Z | - |
dc.date.available | 2023-03-09T03:48:18Z | - |
dc.date.issued | 2000-07 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.issn | 1520-8559 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/66220 | - |
dc.description.abstract | In this article, we present a new one-dimensional (1D) dopant profile determination method, which extends to the quantitative three-dimensional (3D) dopant profile extraction. This nondestructive method, which is different from the common scanning capacitance microscopy (SCM) measurement/dopant extraction, can potentially measure real metal-oxide-semiconductor field-effect transistor devices having 3D structure. Through SCM modeling, we found that the depletion layer in silicon was of a form of a spherical capacitor with the SCM tip biased. Two-dimensional (2D) finite differential method code with a successive over relaxation (SOR) solver has been developed to model the measurements by SCM of a semiconductor wafer that contains an ion-implanted impurity region. Then, we theoretically analyzed the spherical capacitor and determined the total depleted-volume charge Q, capacitance C, and the rate of capacitance change with bias dC/dV. It is very important to observe the depleted carriers' movement in the silicon layer by applying the bias to the tip. So, we calculated the depleted-volume charge, considering different factors such as tip size, oxide thickness, and applied bias (dc + ac), which have an influence on potential and depletion charges. Finally, we developed a 1D inversion algorithm to convert the SCM output (dC/dV) into real dopant concentration, comparing the SCM signal output with the calculated dC/dV. Using the inversion modeling, we have quantitatively extracted the 1D dopant profile from the SCM dC/dV vs V curves. (C) 2000 American Vacuum Society. [S0734-2101(00)15504-6]. | - |
dc.format.extent | 7 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Nondestructive one-dimensional scanning capacitance microscope dopant profile determination method and its application to three-dimensional dopant profiles | - |
dc.type | Article | - |
dc.identifier.doi | 10.1116/1.582473 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.18, no.4, pp 1338 - 1344 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000088276800058 | - |
dc.identifier.scopusid | 2-s2.0-0034229782 | - |
dc.citation.endPage | 1344 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1338 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | - |
dc.citation.volume | 18 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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