Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Designing High-Performance PbS and PbSe Nanocrystal Electronic Devices through Stepwise, Post-Synthesis, Colloidal Atomic Layer Deposition
- Authors
- Oh, Soong Ju; Berry, Nathaniel E.; Choi, Ji-Hyuk; Gaulding, E. Ashley; Lin, Hangfei; Paik, Taejong; Diroll, Benjamin T.; Muramoto, Shin; Murray, Christopher B.; Kagan, Cherie R.
- Issue Date
- Mar-2014
- Publisher
- AMER CHEMICAL SOC
- Keywords
- Lead chalcogenide; nanocrystals; colloidal atomic layer deposition; stoichiometry; solution-process; field-effect transistor
- Citation
- NANO LETTERS, v.14, no.3, pp 1559 - 1566
- Pages
- 8
- Journal Title
- NANO LETTERS
- Volume
- 14
- Number
- 3
- Start Page
- 1559
- End Page
- 1566
- ISSN
- 1530-6984
1530-6992
- Abstract
- We report a simple, solution-based, postsynthetic colloidal, atomic layer deposition (PS-cALD) process to engineer stepwise the surface stoichiometry and therefore the electronic properties of lead chalcogenide nanocrystal (NC) thin films integrated in devices. We found that unlike chalcogen-enriched NC surfaces that are structurally, optically, and electronically unstable, lead chloride treatment creates a well-passivated shell that stabilizes the NCs. Using PS-cALD of lead chalcogenide NC thin films we demonstrate high electron field-effect mobilities of similar to 4.5 cm(2)/(V s).
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of ICT Engineering > School of Integrative Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.