Defect distributions in Cu(In,Ga)(S,Se)(2) solar cells with three different buffer layers
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Yongshin | - |
dc.contributor.author | Choi, In-Hwan | - |
dc.date.available | 2019-03-08T13:37:44Z | - |
dc.date.issued | 2016-03 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.issn | 1878-1675 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/7187 | - |
dc.description.abstract | Defect levels and interface states in ZnO:B/buffer/Cu(In,Ga)(S,Se)(2)/Mo/glass solar cells with a Zn(S,O)/CdS, CdS, or Zn(S,O) buffer layer were investigated by capacitanceevoltage (C-V) and admittance spectroscopy. Two acceptor levels, A1 (with E-a,E-A1 = 0.09 +/- 0.01 eV activation energy) and A2 (E-a,E-A2 = 0.26 +/- 0.02 eV) were observed from the temperature dependence of the C-V profiles. Spatial distributions of these acceptors were determined by the bias dependence of the profiles. In addition, two kinds of defect signals, S1 (E-a,E-S1 = 0.06 eV and 0.07 eV) and S2 (E-a,E-S2 = 0.25 eV), were detected from admittance spectroscopy. Each solar cell exhibited only one signal: S1 in Zn(S,O)/CdS- or Zn(S,O)-buffered solar cells, and S2 in solar cell with a CdS buffer layer. These results demonstrate that buffer layers influence the spatial distributions of intrinsic defect states in the region of the Cu(In,Ga) (S,Se)(2) absorber close to the hetero-interface. (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Defect distributions in Cu(In,Ga)(S,Se)(2) solar cells with three different buffer layers | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.cap.2015.12.012 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.16, no.3, pp 267 - 272 | - |
dc.identifier.kciid | ART002090330 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000369995000008 | - |
dc.identifier.scopusid | 2-s2.0-84951818920 | - |
dc.citation.endPage | 272 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 267 | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 16 | - |
dc.type.docType | Article | - |
dc.publisher.location | 네델란드 | - |
dc.subject.keywordAuthor | CIGS solar cell | - |
dc.subject.keywordAuthor | Admittance | - |
dc.subject.keywordAuthor | Capacitance | - |
dc.subject.keywordAuthor | Buffer | - |
dc.subject.keywordAuthor | Interface | - |
dc.subject.keywordPlus | CHEMICAL BATH DEPOSITION | - |
dc.subject.keywordPlus | ZN(S,O) BUFFER | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | CU(IN,GA)SE-2 | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | CUINSE2 | - |
dc.subject.keywordPlus | STATES | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | ADMITTANCE | - |
dc.subject.keywordPlus | HETEROJUNCTIONS | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
84, Heukseok-ro, Dongjak-gu, Seoul, Republic of Korea (06974)02-820-6194
COPYRIGHT 2019 Chung-Ang University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.