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라만 분광법을 이용한 반도체 공정 중 표면 분석Surface analysis using Raman spectroscopy during semiconductor processing

Authors
최태민유진욱정은수이채연이화림김동현표성규
Issue Date
Apr-2024
Publisher
한국표면공학회
Keywords
Raman Spectroscopy; Semiconductor Processing; Surface analysis; In-situ monitoring
Citation
한국표면공학회지, v.57, no.2, pp 71 - 85
Pages
15
Journal Title
한국표면공학회지
Volume
57
Number
2
Start Page
71
End Page
85
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/73817
DOI
10.5695/JSSE.2024.57.2.71
ISSN
1225-8024
2288-8403
Abstract
This article provides an overview of Raman spectroscopy and its practical applications for surface analysis of semiconductor processes including real-time monitoring. Raman spectroscopy is a technique that uses the inelastic scattering of light to provide information on molecular structure and vibrations. Since its inception in 1928, Raman spectroscopy has undergone continuous development, and with the advent of SERS(Surface Enhanced Raman Spectroscopy), TERS(Tip Enhanced Raman Spectroscopy), and confocal Raman spectroscopy, it has proven to be highly advantageous in nano-scale analysis due to its high resolution, high sensitivity, and non-destructive nature. In the field of semiconductor processing, Raman spectroscopy is particularly useful for substrate stress and interface characterization, quality analysis of thin films, elucidation of etching process mechanisms, and detection of residues.
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