라만 분광법을 이용한 반도체 공정 중 표면 분석Surface analysis using Raman spectroscopy during semiconductor processing
- Authors
- 최태민; 유진욱; 정은수; 이채연; 이화림; 김동현; 표성규
- Issue Date
- Apr-2024
- Publisher
- 한국표면공학회
- Keywords
- Raman Spectroscopy; Semiconductor Processing; Surface analysis; In-situ monitoring
- Citation
- 한국표면공학회지, v.57, no.2, pp 71 - 85
- Pages
- 15
- Journal Title
- 한국표면공학회지
- Volume
- 57
- Number
- 2
- Start Page
- 71
- End Page
- 85
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/73817
- DOI
- 10.5695/JSSE.2024.57.2.71
- ISSN
- 1225-8024
2288-8403
- Abstract
- This article provides an overview of Raman spectroscopy and its practical applications for surface analysis of semiconductor processes including real-time monitoring. Raman spectroscopy is a technique that uses the inelastic scattering of light to provide information on molecular structure and vibrations. Since its inception in 1928, Raman spectroscopy has undergone continuous development, and with the advent of SERS(Surface Enhanced Raman Spectroscopy), TERS(Tip Enhanced Raman Spectroscopy), and confocal Raman spectroscopy, it has proven to be highly advantageous in nano-scale analysis due to its high resolution, high sensitivity, and non-destructive nature. In the field of semiconductor processing, Raman spectroscopy is particularly useful for substrate stress and interface characterization, quality analysis of thin films, elucidation of etching process mechanisms, and detection of residues.
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Collections - College of ICT Engineering > School of Integrative Engineering > 1. Journal Articles
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