Numerical simulation of p-type diamond Schottky barrier diodes for high breakdown voltage
DC Field | Value | Language |
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dc.contributor.author | Kang, Dong-Won | - |
dc.contributor.author | Chang, Hae Nyung | - |
dc.contributor.author | Ha, Min-Woo | - |
dc.date.accessioned | 2024-07-18T02:01:14Z | - |
dc.date.available | 2024-07-18T02:01:14Z | - |
dc.date.issued | 2017-06 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.issn | 1347-4065 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/74912 | - |
dc.description.abstract | P-type diamond devices have high potential for power semiconductors due to their high critical field, hole mobility, and thermal conductivity. The electrical characteristics of p-type pseudovertical diamond Schottky barrier diodes (SBDs) were investigated by numerical simulation. The impact ionization coefficients were required to obtain the breakdown voltage. They were revised to satisfy a parallel-plane breakdown field of 10MV/cm. The doping concentration and thickness of a low-doped drift layer were key parameters in determining the parallel-plane breakdown voltage. The p-type pseudovertical diamond SBDs exhibited lower breakdown voltage than the parallel-plane breakdown voltage because field crowding occurred at the edge of the cathode. When the doping concentration and thickness of the p- drift layer were 10(16)cm(-3) and 4 mu m, respectively, the breakdown voltage of the p-type pseudovertical diamond SBD was 961V, which was considerably less than the parallel-plane breakdown voltage of 3646V. (C) 2017 The Japan Society of Applied Physics | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Numerical simulation of p-type diamond Schottky barrier diodes for high breakdown voltage | - |
dc.type | Article | - |
dc.identifier.doi | 10.7567/JJAP.56.06GE09 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.56, no.6 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000402525800002 | - |
dc.identifier.scopusid | 2-s2.0-85020547680 | - |
dc.citation.number | 6 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 56 | - |
dc.type.docType | Article | - |
dc.publisher.location | 영국 | - |
dc.subject.keywordPlus | DEVICE SIMULATION | - |
dc.subject.keywordPlus | IONIZATION RATES | - |
dc.subject.keywordPlus | SILICON | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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