Development of Wide Band Gap P-a-SiOxCy:H Using Additional Trimethylboron as Carbon Source Gas
DC Field | Value | Language |
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dc.contributor.author | Kang, Dong-Won | - |
dc.contributor.author | Sichanugrist, Porponth | - |
dc.contributor.author | Janthong, Bancha | - |
dc.contributor.author | Khan, Muhammad Ajmal | - |
dc.contributor.author | Niikura, Chisato | - |
dc.contributor.author | Konagai, Makoto | - |
dc.date.accessioned | 2024-07-18T02:30:46Z | - |
dc.date.available | 2024-07-18T02:30:46Z | - |
dc.date.issued | 2016-07 | - |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.issn | 2093-6788 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/74936 | - |
dc.description.abstract | We report p-type a-SiOxCy:H thin films which were fabricated by introducing additional Trimethylboron (TMB, B(CH3)(3)) doping gas into conventional standard p-type a-SOi(x):H films. The TMB addition into the condition of p-a-SiOx,:H improved optical bandgap from 2.14 to 2.20 eV without deterioration of electrical conductivity, which is promising for p-type window layer of thin film solar cells. The suggested p-a-SiOxCy:H films were applied in amorphous silicon solar cells and we found an increase of quantum efficiency at short wavelength regions due to wide bandgap of the new p-layer, and thus efficiency improvement from 10.4 to 10.7% was demonstrated in a-Si:H solar cell by employing the p-a-SiOxCy:H film. In case of a-SiOx:H cell, high open circuit voltage of 1.01 V was confirmed by using the suggested the p-a-SiOxCy:H film as a window layer. This new player can be highly promising as a wide bandgap window layer to improve the performance of thin film silicon solar cells. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.title | Development of Wide Band Gap P-a-SiOxCy:H Using Additional Trimethylboron as Carbon Source Gas | - |
dc.type | Article | - |
dc.identifier.doi | 10.1007/s13391-016-4007-y | - |
dc.identifier.bibliographicCitation | ELECTRONIC MATERIALS LETTERS, v.12, no.4, pp 462 - 467 | - |
dc.identifier.kciid | ART002127247 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000379226000008 | - |
dc.identifier.scopusid | 2-s2.0-84978945625 | - |
dc.citation.endPage | 467 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 462 | - |
dc.citation.title | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.volume | 12 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.publisher.location | 대한민국 | - |
dc.subject.keywordAuthor | trimethylboron | - |
dc.subject.keywordAuthor | p-a-SiOxCy:H | - |
dc.subject.keywordAuthor | solar cell | - |
dc.subject.keywordAuthor | amorphous silicon oxide | - |
dc.subject.keywordPlus | FILM SOLAR-CELLS | - |
dc.subject.keywordPlus | JUNCTION | - |
dc.subject.keywordPlus | TRIPLE | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | LAYER | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
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