Light management of a-SiOx:H thin film solar cells with hydrogen-reduced p plus buffer at TiO2/p-layer interface
- Authors
- Kang, Dong-Won; Chowdhury, Amartya; Sichanugrist, Porponth; Konagai, Makoto
- Issue Date
- Dec-2015
- Publisher
- ELSEVIER
- Keywords
- Solar cell; Anti-reflection; Back reflection; Silicon oxide; H-2-reduced buffer
- Citation
- SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.143, pp 296 - 301
- Pages
- 6
- Journal Title
- SOLAR ENERGY MATERIALS AND SOLAR CELLS
- Volume
- 143
- Start Page
- 296
- End Page
- 301
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/74945
- DOI
- 10.1016/j.solmat.2015.07.016
- ISSN
- 0927-0248
1879-3398
- Abstract
- In this study, light-management approaches for amorphous silicon oxide (a-SiOx:H) thin film solar cells were developed. First, to enhance back reflection in the device, an Al-doped ZnO (AZO) film was introduced at the back interface between n-type nanocrystalline silicon oxide (n-nc-SiOx:H) and Ag. In addition, we successfully suppressed optical losses at front interfaces by employing anti-reflection layers of MgF2 at air/Asahi-VU and TiO2 at Asahi-VU/p-layer interfaces. These light-managing techniques contributed to the enhancing of the short circuit current density (J(SC)) from 9.88 to 11.42 mA/cm(2), resulting in an increase in efficiency from 735% to 8.15%. We next replaced AZO/p-nc-SiOx:H conventional buffer layers inserted at the TiO2/p-layer interface by developing a hydrogen-reduced p+ buffer layer to remove the AZO protection layer. The new TiO2/buffer structure was found to be beneficial for attaining a good fill factor (0.738) and open circuit voltage (1.013 V) by avoiding hydrogen plasma damages; this, improved the efficiency of the a-SiOx:H solar cell up to 8.40% when using a very thin absorber of only 100 nm. (C) 2015 Elsevier B.V. All rights reserved.
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