Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells
DC Field | Value | Language |
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dc.contributor.author | Kang, Dong-Won | - |
dc.contributor.author | Kwon, Jang-Yeon | - |
dc.contributor.author | Shim, Jenny | - |
dc.contributor.author | Lee, Heon-Min | - |
dc.contributor.author | Han, Min-Koo | - |
dc.date.accessioned | 2024-07-18T04:31:02Z | - |
dc.date.available | 2024-07-18T04:31:02Z | - |
dc.date.issued | 2012-10 | - |
dc.identifier.issn | 0927-0248 | - |
dc.identifier.issn | 1879-3398 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/74959 | - |
dc.description.abstract | Highly conductive GaN film was prepared by magnetron sputtering and this was applied as an antireflection layer (ARL) between a transparent conducting oxide and microcrystalline silicon (mu c-Si:H) in order to decrease optical reflection. The efficiency (8.81%) of pc-Si:H single junction thin film solar cell with the proposed GaN ARL exceeded that of the cell (8.36%) with the widely used TiO2/ZnO bilayer ARL Moreover, the proposed GaN ARL requires no protection layer against hydrogen plasma such as ZnO overcoating (similar to 10 nm) in case of the TiO2/ZnO bilayer. GaN ARL can replace the TiO2/ZnO bilayer ARL in terms of high performance and simple fabrication process. (c) 2012 Elsevier B.V. All rights reserved. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER | - |
dc.title | Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.solmat.2012.06.041 | - |
dc.identifier.bibliographicCitation | SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.105, pp 317 - 321 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000308386000046 | - |
dc.identifier.scopusid | 2-s2.0-84864469955 | - |
dc.citation.endPage | 321 | - |
dc.citation.startPage | 317 | - |
dc.citation.title | SOLAR ENERGY MATERIALS AND SOLAR CELLS | - |
dc.citation.volume | 105 | - |
dc.type.docType | Article | - |
dc.publisher.location | 네델란드 | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | TiO2/ZnO | - |
dc.subject.keywordAuthor | Anti-reflection layer | - |
dc.subject.keywordAuthor | Microcrystalline silicon | - |
dc.subject.keywordAuthor | Thin film solar cells | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.relation.journalResearchArea | Energy & Fuels | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Energy & Fuels | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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