Boron and Aluminum Codoped ZnO Transparent Conducting Films with High Electrical Stability
DC Field | Value | Language |
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dc.contributor.author | Kang, Dong-Won | - |
dc.contributor.author | Kwon, Jang-Yeon | - |
dc.contributor.author | Lee, Do-Joong | - |
dc.contributor.author | Han, Min-Koo | - |
dc.date.accessioned | 2024-07-18T04:31:27Z | - |
dc.date.available | 2024-07-18T04:31:27Z | - |
dc.date.issued | 2012 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.issn | 1945-7111 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/74970 | - |
dc.description.abstract | We suggest boron (B) and aluminum (Al) codoped ZnO (BAZO) transparent conducting thin films with high electrical stability for photovoltaic applications. The resistivity of widely used Al-doped ZnO (AZO) film decreased slightly by B doping. Above all, the resistivity of BAZO (4.9 at. % boron) increased by less than 1.5 times, whereas that of reference AZO film increased by over than 8 times after thermal annealing in atmospheric air. The carrier concentration and Hall mobility were much less degraded in BAZO films. X-ray photoelectron spectroscopy analysis showed that the peak portion related with chemisorbed oxygen at 100 nm-inside of the film was suppressed in BAZO film compared with AZO film. The B atoms would restrain the oxygen permeation into the film, which made the process of oxygen chemisorption inactive. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.002202jes] All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Boron and Aluminum Codoped ZnO Transparent Conducting Films with High Electrical Stability | - |
dc.type | Article | - |
dc.identifier.doi | 10.1149/2.002202jes | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.159, no.2, pp H61 - H65 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000298637500069 | - |
dc.identifier.scopusid | 2-s2.0-84855338061 | - |
dc.citation.endPage | H65 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | H61 | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 159 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordPlus | OXIDE THIN-FILMS | - |
dc.subject.keywordPlus | DAMP HEAT-STABILITY | - |
dc.subject.keywordPlus | AL FILMS | - |
dc.subject.keywordPlus | ZINC | - |
dc.subject.keywordPlus | RF | - |
dc.subject.keywordPlus | PARAMETERS | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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