The positive gate bias annealing method for the suppression of a leakage current in the SPC-Si TFT on a glass substrate
DC Field | Value | Language |
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dc.contributor.author | Park, Sang-Geun | - |
dc.contributor.author | Park, Joong-Hyun | - |
dc.contributor.author | Kuk, Seung-Hee | - |
dc.contributor.author | Kang, Dong-Won | - |
dc.contributor.author | Han, Min-Koo | - |
dc.date.accessioned | 2024-07-18T05:00:29Z | - |
dc.date.available | 2024-07-18T05:00:29Z | - |
dc.date.issued | 2008 | - |
dc.identifier.issn | 0272-9172 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/74975 | - |
dc.description.abstract | We fabricated PMOS SPC-Si TFTs which show better current uniformity than ELA poly-Si TFTs and superior stability compare to a-Si:H TFT on a glass substrate employing alternating magnetic field crystallization. However the leakage current of SPC-Si TFT was rather high for circuit element of AMOLED display due to many grain boundaries which could be electron hole generation centers. We applied off-state bias annealing of VGS=5V, V DS=-20V in order to suppress the leakage current of SPC-Si TFT. When the off-state bias annealing was applied on the SPC-Si TFT, the electron carriers were trapped in the gate insulator by high gate-drain voltage (25V). The trapped electron carriers could reduce the gate-drain field, so that the leakage current of SPC-Si TFT was reduced after off-state bias annealing. We applied AC-bias stress on the gate node of SPC-Si TFT for 20,000 seconds in order to verify that the leakage current of SPC-Si TFT could be remained low at actual AMOLED display circuit after off-state bias annealing. The suppressed leakage current was not altered after AC-bias stress. The off-state bias annealed SPC-Si TFT could be used as pixel element of high quality AMOLED display. © 2008 Materials Research Society. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Materials Research Society | - |
dc.title | The positive gate bias annealing method for the suppression of a leakage current in the SPC-Si TFT on a glass substrate | - |
dc.type | Article | - |
dc.identifier.doi | 10.1557/proc-1066-a13-03 | - |
dc.identifier.bibliographicCitation | Materials Research Society Symposium Proceedings, v.1066, pp 301 - 306 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-62949249467 | - |
dc.citation.endPage | 306 | - |
dc.citation.startPage | 301 | - |
dc.citation.title | Materials Research Society Symposium Proceedings | - |
dc.citation.volume | 1066 | - |
dc.type.docType | Conference paper | - |
dc.description.journalRegisteredClass | scopus | - |
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