The characteristics of the asymmetric-offset structure n-type polycrystalline thin-film transistors fabricated by alternating magnetic-field-enhanced rapid thermal annealing

Abstract

We designed and fabricated asymmetric-offset structure (AOS) top-gate n-type depletion mode polycrystalline silicon (poly-Si) thin film transistors (TFTs) which suppressed the leakage current considerably and have improved reliability significantly. The TFTs were fabricated on the glass substrates by employing alternating magnetic-field-enhanced rapid thermal annealing (AMFERTA) in order to improve the uniformity compared with widely used excimer laser annealing (ELA). The asymmetric-offset structure TFT can be made without additional doping processes or masks. These structures could greatly suppress the leakage current without sacrifice the ON current with increasing V DS and decreasing VGS. This device structure can be useful for achieving good image quality, high stability, and reducing the power consumption of active matrix organic light-emitting diode (AMOLED) panels.