Room-Temperature Solution-Synthesized p-Type Copper(I) Iodide Semiconductors for Transparent Thin-Film Transistors and Complementary Electronics
DC Field | Value | Language |
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dc.contributor.author | Liu, Ao | - |
dc.contributor.author | Zhu, Huihui | - |
dc.contributor.author | Park, Won-Tae | - |
dc.contributor.author | Kang, Seok-Ju | - |
dc.contributor.author | Xu, Yong | - |
dc.contributor.author | Kim, Myung-Gil | - |
dc.contributor.author | Noh, Yong-Young | - |
dc.date.available | 2019-01-22T12:58:59Z | - |
dc.date.issued | 2018-08 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.issn | 1521-4095 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/898 | - |
dc.description.abstract | Here, room-temperature solution-processed inorganic p-type copper iodide (CuI) thin-film transistors (TFTs) are reported for the first time. The spin-coated 5 nm thick CuI film has average hole mobility (mu(FE)) of 0.44 cm(2) V-1 s(-1) and on/off current ratio of 5 x 10(2). Furthermore, mu(FE) increases to 1.93 cm(2) V-1 s(-1) and operating voltage significantly reduces from 60 to 5 V by using a high permittivity ZrO2 dielectric layer replacing traditional SiO2. Transparent complementary inverters composed of p-type CuI and n-type indium gallium zinc oxide TFTs are demonstrated with clear inverting characteristics and voltage gain over 4. These outcomes provide effective approaches for solution-processed inorganic p-type semiconductor inks and related electronics. | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Room-Temperature Solution-Synthesized p-Type Copper(I) Iodide Semiconductors for Transparent Thin-Film Transistors and Complementary Electronics | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/adma.201802379 | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.30, no.34 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000442206400021 | - |
dc.identifier.scopusid | 2-s2.0-85050366052 | - |
dc.citation.number | 34 | - |
dc.citation.title | ADVANCED MATERIALS | - |
dc.citation.volume | 30 | - |
dc.type.docType | Article | - |
dc.publisher.location | 오스트리아 | - |
dc.subject.keywordAuthor | inorganic p-type semiconductor | - |
dc.subject.keywordAuthor | low voltage | - |
dc.subject.keywordAuthor | room-temperature synthesis | - |
dc.subject.keywordAuthor | solution process | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.subject.keywordPlus | OXIDE SEMICONDUCTORS | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | CUI | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | CONDUCTOR | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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