Solution-processed quantum dot light-emitting diodes with PANI: PSS hole-transport interlayers
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Young Ran | - |
dc.contributor.author | Doh, Ji Hoon | - |
dc.contributor.author | Shin, Koo | - |
dc.contributor.author | Seo, Young Soo | - |
dc.contributor.author | Kim, Yun Seok | - |
dc.contributor.author | Kim, Soo Young | - |
dc.contributor.author | Choi, Won Kook | - |
dc.contributor.author | Hong, Young Joon | - |
dc.date.available | 2019-03-08T17:39:58Z | - |
dc.date.issued | 2015-04 | - |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.issn | 1878-5530 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/9672 | - |
dc.description.abstract | For solution-processed quantum dot light-emitting devices (QD-LEDs), poly(3,4-ethylenedioxythiophene) polystyrene sulfonate/poly(N-vinylcarbozole) (PEDOT:PSS/PVK) bilayers have been widely used as the hole injection/transport layer. The high work function of the hole transport layer is crucial for high electroluminescence efficiency with balanced electron/hole charge injection. Herein, we report improvement of the performance of QD-LEDs by inserting a polyaniline (PANI)-poly (p-styrenesulfonic acid) (PSS) (PANI: PSS) hole-transport layer between the PVK and PEDOT: PSS layers. The insertion of the PANI: PSS layer significantly shifted the electronic energy levels of the PVK layers to lower values, which reduced the energy barrier of holes traveling to the QD layer by 0.22 eV. The QD-LEDs with PANI: PSS interlayer exhibited superior electric and electroluminescent characteristics. The hole-only devices with PANI: PSS interlayer also presented high hole injection and transport capability. Ultraviolet photoelectron spectroscopy (UPS) was used to investigate the electronic energy level alignment of the QD-LEDs with/without the PANI: PSS interlayer. The device performance results of QD-LEDs and hole-only devices indicated enhanced electric and electroluminescent characteristics for the PANI: PSS-inserted QD-LEDs with high hole conduction capability, in agreement with UPS findings. (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.format.extent | 9 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Solution-processed quantum dot light-emitting diodes with PANI: PSS hole-transport interlayers | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.orgel.2014.12.030 | - |
dc.identifier.bibliographicCitation | ORGANIC ELECTRONICS, v.19, pp 131 - 139 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000350595300015 | - |
dc.identifier.scopusid | 2-s2.0-84922584264 | - |
dc.citation.endPage | 139 | - |
dc.citation.startPage | 131 | - |
dc.citation.title | ORGANIC ELECTRONICS | - |
dc.citation.volume | 19 | - |
dc.type.docType | Article | - |
dc.publisher.location | 네델란드 | - |
dc.subject.keywordAuthor | Charge balance | - |
dc.subject.keywordAuthor | Electronic energy level alignment | - |
dc.subject.keywordAuthor | Hole transport layer | - |
dc.subject.keywordAuthor | PANI:PSS | - |
dc.subject.keywordAuthor | Quantum dot light-emitting device | - |
dc.subject.keywordPlus | POLYMER ELECTROLUMINESCENT DEVICES | - |
dc.subject.keywordPlus | HIGHLY EFFICIENT | - |
dc.subject.keywordPlus | WORK FUNCTION | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | INJECTION | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | INTERFACES | - |
dc.subject.keywordPlus | NANOPARTICLES | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
84, Heukseok-ro, Dongjak-gu, Seoul, Republic of Korea (06974)02-820-6194
COPYRIGHT 2019 Chung-Ang University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.