Polarized Raman spectroscopy with differing angles of laser incidence on single-layer graphene
DC Field | Value | Language |
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dc.contributor.author | Heo, Gaeun | - |
dc.contributor.author | Kim, Yong Seung | - |
dc.contributor.author | Chun, Seung-Hyun | - |
dc.contributor.author | Seong, Maeng-Je | - |
dc.date.available | 2019-03-08T17:58:05Z | - |
dc.date.issued | 2015-02 | - |
dc.identifier.issn | 1556-276X | - |
dc.identifier.issn | 1556-276X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/9874 | - |
dc.description.abstract | Chemical vapor deposition (CVD)-grown single-layer graphene samples, transferred onto a transmission electron microscope (TEM) grid and onto a quartz plate, were studied using polarized Raman spectroscopy with differing angles of laser incidence (theta). Two different polarization configurations are used. In an in-plane configuration, the polarization direction of both incident and scattered light is parallel to the graphene plane. In an out-of-plane configuration, the angle between the polarization vector and the graphene plane is the same as the angle of laser incidence (theta). The normalized Raman intensity of the G-band measured in the out-of-plane configuration, with respect to that in the in-plane configuration, was analyzed as a function of theta. The normalized Raman intensity showed approximately cos(2) theta-dependence up to theta = 70 degrees, which can be explained by the fact that only the electric field component of the incident and the scattered photon in the out-of-plane configuration projected onto the graphene plane can contribute to the Raman scattering process because of the perfect confinement of the electrons to the graphene plane. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | SPRINGER | - |
dc.title | Polarized Raman spectroscopy with differing angles of laser incidence on single-layer graphene | - |
dc.type | Article | - |
dc.identifier.doi | 10.1186/s11671-015-0743-4 | - |
dc.identifier.bibliographicCitation | NANOSCALE RESEARCH LETTERS, v.10, no.1, pp 1 - 5 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000349614700001 | - |
dc.identifier.scopusid | 2-s2.0-84922610949 | - |
dc.citation.endPage | 5 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.title | NANOSCALE RESEARCH LETTERS | - |
dc.citation.volume | 10 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | Polarized Raman | - |
dc.subject.keywordAuthor | Oblique incidence | - |
dc.subject.keywordAuthor | Raman selection rule | - |
dc.subject.keywordPlus | WALL CARBON NANOTUBES | - |
dc.subject.keywordPlus | BILAYER GRAPHENE | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | FILMS | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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