CAU Scholar's Space: Chang, Seo Hyoung

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Chang, Seo Hyoung (장서형)

자연과학대학 (물리학과)

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Tel 02-820-5215
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pulsed laser deposition:4||resistance switching:3||nickel compounds:3||Xray diffraction:2||interface engineering:2||Pulsed laser deposition:2||thin films:2||BaTiO3:2||Raman spectroscopy:2||Epitaxial film:2||Thin films:2||Resistance switching:2||oxygen vacancies:2||capacitors:2||NiO:2||Oxygen evolution reaction:2||Dy3+:1||Electrical conductivity:1||Electrochemistry:1||Electrode material:1||Exsitu annealing:1||Fe2O3:1||Ferroelectricity:1||Filamentary model:1||Functional devices:1||GaAs substrate:1||In2O3:1||In2S3:1||Iridium:1||Joule heating:1||Joule heating effects:1||Laser processing:1||Lattice expansion:1||Lattice strain:1||Leadfree:1||LiNbO3:1||Light emitting diodes:1||Luminescence:1||Magneli phase:1||Magnetoelectric coupling:1||Magnetooptic kerr effect:1||Memory switching:1||Memristor:1||Molecular beam epitaxy:1||Optical band gap:1||Optical properties:1||Oxide supports:1||Oxide thin films:1||Oxides:1||Oxygen evolution:1||Oxygen isoelectronic impurity:1||Oxygen reduction reaction:1||Phosphors:1||Photoelectron spectroscopies:1||Photoluminescence:1||Piezoelectricity:1||Polarization:1||Ptbased fuel cell electrocatalysts:1||RRAM:1||Resistance randomaccess memory:1||Resonant inelastic Xray scattering:1||RuO2:1||Ruddlesden–Popper oxides:1||RuddlesdenPopper phase:1||Ruthenium:1||Sr2RuO4thin films:1||Sr3Y(PO4)(3):1||SrLaMgTaO6:1||SrRuO(3)thin films:1||SrRuO3:1||Structural phase transition:1||Surface area:1||Surface chemistry:1||Threshold switching:1||TiN:1||Topological Hall effect:1||Transitionmetal dichalcogenide:1||Transitionmetal oxides:1||Ultrathin film:1||Unipolar resistance switching:1||Vanadium diselenide:1||Weyl semimetals:1||White LED:1||X ray scattering:1||Xray irradiation:1||Xray scattering:1||ZnO:1||ZnTe:1||anomalous Hall effect:1||antiferromagnetic domains:1||coercive field:1||correlated topological phases:1||crossbar architecture:1||currentvoltage measurement:1||dBand:1||defect engineering:1||defect generation:1||electrical conductivity transitions:1||electrical resistivity:1||electroforming:1||electronic materials:1||electronic processes:1||electronic structures:1||engineering:1||epitaxial thin films:1||epitaxy:1||ferroelectric:1||ferroelectric critical thickness:1||ferroelectricity:1||fullfield microscopy:1||harmonic generation:1||heteroepitaxy:1||highT c superconductivity:1||iridium blue layer:1||iridium oxide:1||iron oxides:1||long&#8208:1||magnetic anisotropy:1||metaltoinsulator phase transition:1||metamaterials:1||monometallic oxides:1||multiferroics:1||nanodevices:1||nanoscale inhomogeneity of perovskite SrRuO 3:1||nanoscalelayeredferromagnets:1||optically active materials:1||outofphase boundary:1||oxide:1||oxide heterostructure:1||oxide heterostructures:1||oxide interfaces:1||pair distribution function (PDF):1||perpendicular magnetic anisotropy:1||photovoltaic effect:1||polar oxides:1||pyrochlore iridates:1||randomaccess storage:1||range Coulomb interactions:1||resistive switching:1||resonant inelastic Xray scattering (RIXS):1||resonant magnetic Xray diffraction:1||roomtemperature ferromagnetism:1||scanning transmission electron microscopy:1||sneak path problem:1||spintronic applications:1||strain&#8208:1||structure–property relationships:1||switching:1||template engineering:1||thermodynamic surface stability:1||thin film:1||titanium dioxide:1||twodimensional materials:1||unconventional superconductivity:1||van der Waals:1||van der Waals magnetic materials:1||water oxidation:1||(Na0.7K0.3)(0.5)Bi0.5TiO3:1||water splitting:1||A. ZnO film:1||Absorption:1||Anomalous Hall effect:1||B. ZnO nanowire:1||C. PLD:1||Carrier concentration:1||Charge transfer:1||Coherent bragg rod analysis:1||Cr2Te3 thin films:1||Crystal truncation rod:1||Curie temperature:1||DC sputtering:1||DFT calculations:1||Domain:1||Double perovskites:1||

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