CAU Scholar's Space: Kim, Chang Il

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Kim, Chang Il (김창일)

창의ICT공과대학 (전자전기공학부)

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Tel 02-820-5334
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XPS:68||ICP:65||Etching:44||OES:30||Etch:23||etching:21||BLT:18||Inductively coupled plasma:17||dissociation:16||MOD:15||Xray photoelectron spectroscopy:15||dielectric properties:15||AFM:14||thin film:12||Ferroelectric:12||solgel:11||BST:11||PZT:11||FRAM:9||inductively coupled plasma:9||TiN:9||electron temperature:9||ferroelectric properties:9||etch rate:9||CF4:8||etch:8||CF4/Ar:8||ionization:8||Plasma:7||AES:7||Al2O3:7||HfO2:7||tunability:7||ZrO2:7||TaN:7||rate coefficient:6||plasma etching:6||FeRAM:6||Zinc oxide:6||YMnO3:6||Langmuir probe:6||Solgel:6||PST:5||QMS:5||SBT:5||XRD:5||Plasma etching:5||NKN:5||ITO:5||plasma:5||Au:5||ionassisted etching:5||Thin Film:5||TiO2:5||MgO:5||HfAlO3:4||Xray photoelectron spectroscopy (XPS):4||BET:4||Etch rate:4||BCl3:4||MFIS:4||ZnO:4||CeO2:4||(Ba,Sr)TiO3:3||Bi4xLaxTi3O12:3||Dielectric:3||Chlorine:3||BCl3/Ar:3||IGZO:3||fatigue:3||ferroelectric:3||Cl2/Ar:3||Ru:3||SIMS:3||(Ba,Sr,Ca)TiO3:3||Cl2:3||memory window:3||SrBi2Ta2O9:3||perovskite:3||Cl2/Ar:3||Cl2/CF4/Ar:3||HDP:3||Ar:3||ACP:3||TaNO:2||chlorine plasma:2||Temperature:2||BCl₃/Ar:2||metalorganic decomposition (MOD):2||Thin film:2||metalorganic decomposition:2||Aldoped ZnO:2||SolGel:2||leakage current:2||Cl2/BCl3/Ar:2||Langmuir:2||LaNiO3:2||Titanium nitride:2||Selectivity:2||N2:2||UPS:2||SU8:2||Auger electron spectroscopy:2||SF6:2||SEM:2||Highk:2||Work function:2||AZO:2||Damage:2||Xray chemical analysis:2||argon:2||O2/BCl3/Ar:2||Cl2/Ar plasma:2||ferroelectric random access memory:2||etching mechanism:2||etch mechanism:2||Indium zinc oxide:2||electron impact:2||Cl2:2||thin films:2||ZTO:2||Dissociation:2||Catalytic CVD:2||dielectrics:2||tunable device:2||dielectric:2||density:2||Fatigue:2||optical emission spectroscopy (OES):2||work function:2||optical emission spectroscopy:2||modeling:2||Optical Emission Spectroscopy (OES):1||Optical emission spectroscopy:1||Oxide semiconductor:1||Oxygen:1||Oxygen vacancy:1||PZT thin film:1||PZTM:1||Pb(Zr,Ti)O3:1||PbxSr1xTiO3:1||Phase shifter:1||Photodetector:1||Photodetector (수광 소
자):1||Photoresist mask removing:1||Plasma Diagnostics:1||Plasma diagnostics:1||Plasma etch:1||Plasma oxidation:1||Plasma treatment:1||Polyimide:1||Pt/Zr/Ti (PZT):1||Pyrolysis:1||RFSputtering:1||Raman Spectroscopy:1||Reactive ion etching:1||Samarium:1||Scanning electron microscopy:1||Selenization:1||Sidewall passivant:1||Silicon etching:1||SingleWalled CNT:1||SnO2:1||Spin coating:1||Sputtered thin film:1||Sputtering:1||SrTiO3:1||Surface:1||Surface and physical property:1||Surface roughness:1||TCO:1||TCR:1||TEM:1||Tantalum Nitride:1||Texturing:1||Thin films:1||Ti3c2tx network:1||TiO 2:1||Tin:1||Tunability:1||TwoStage Process:1||Ultraviolet photoelectron spectroscopy:1||Voltammogram:1||Weak antilocalization (wal):1||Weak localization (wl):1||Xray Photoelectron Spectroscopy:1||Xray Photoelectron Spectroscopy (XPS):1||Xray diffraction:1||Xray photoelectron spectra:1||YMnO:1||Zinc sulfide:1||ZnOSnO2 (ZTO):1||ZnS:1||aluminium compounds:1||bandgap:1||barrierlayer:1||bismuth layer:1||boron compounds:1||chlorine:1||cobalt alloys:1||crystallinity:1||damage:1||deposition process:1||desorption:1||dielectric thin films:1||drying:1||dynamical switching:1||electric properties:1||electrical properties:1||electrical properties and measurement:1||electrical properties and measurements:1||electron and ion densities:1||electron density:1||etch damage:1||etching damage:1||external quantum efficiency (EQE):1||ferroelectric random access memories:1||ferroelectric random access memory (FeRAM):1||ferroelectrics:1||films:1||fluorocarbon film:1||gateinduceddrainleakage current:1||global warming potential:1||grain size:1||heterolayered thin film:1||heterostructures:1||highk materials:1||inductively coupled plasma (ICP):1||ionassisted etching ionization:1||ionic radius:1||ionisation:1||iron alloys:1||lanthanides substitutions:1||low GWP alternative gas:1||magnesium oxide:1||magnetic:1||magnetized plasma diode:1||manganese:1||metalorganic decomposition (MOD):1||metallic thin films:1||monolithic tandem solar cell:1||organic compounds:1||orientation:1||particle simulation:1||phase transition:1||plasma charging damage:1||plasma damage:1||plasma materials processing:1||plasma modeling:1||plasma treatment:1||polarization:1||potential relaxation instability:1||quadrupole mass spectrometry:1||randomaccess storage:1||recombination:1||retention:1||screen printing:1||secondary ion mass spectrometer:1||secondary ion mass spectrometry:1||secondary ion mass spectrometry (SIMS):1||seeding layer:1||selective etching:1||selfaligned contact:1||selfoscillation:1||silicon compounds:1||solgel preparation:1||solgel process:1||solgel processes:1||spectral response:1||sputter etching:1||sputtering:1||surface:1||surface characteristics:1||surface modification:1||surface passivant:1||surface roughness:1||surface treatment:1||thick film:1||thick films:1||threshold voltage shift:1||transparent conducting oxide (TCO):1||transparent conductive oxide:1||ultraviolet photoelectron spectroscopy:1||volume and surface kinetics:1||zinc sulfide:1||zinc tin oxide:1||상보성 금속 산화물 반도체 시각 센서):1||전하 결합 소자):1||(Pb,Sr)TiO3:1||(Pb,Sr)TiO3 (PST):1||APCVD:1||Adaptive coupled plasma:1||Adaptively coupled plasma (ACP):1||Adhesion:1||Aldoped ZnO (AZO):1||Annealing temperature:1||Ar/BCl3:1||Ar/Cl2:1||Ar/Cl2 plasma:1||Atomic emission spectroscopy:1||Atomic force microscopy:1||BCB:1||BCL3/Ar:1||BCl 3:1||BCl(3):1||BCl3/Ar 1.:1||BCl3/He:1||BCl31:1||BCl₃:1||BaTiO3:1||Band gap:1||Bandgap modulation:1||Bi(1x)La(x)TagO(12):1||Bi0.5(Na0.82K0.18)(0.5)TiO3:1||Bi1xLaxTa9O12:1||Bi4xEuxTi3O12 (BET):1||Biomimetic (생체 모방):1||Boron trichloride:1||CF4based plasma:1||CF4/Ar1:1||CF4/O2:1||CF4/O2:1||CH3OH:1||CH4:1||CMOS Image Sensor (CIS:1||CNF:1||Carbon Nanotube:1||Carbon nanotubes:1||Carbon tetrafluoride:1||CarbonNanofiber (CNF):1||Carrier mobility:1||Charge Coupled Device(CCD:1||Chemical kinetics:1||Cl 2:1||Cl 2/BCl 3:1||Cl2 inductive plasma:1||Cl2 plasma:1||Cl2based plasma:1||Cl2/CF4:1||Cl2/CF4/Ar:1||Cl2/CF4/Ar plasma:1||Cl₂:1||CoFe:1||Coatings:1||Copper:1||Copper oxide:1||Crystal defect:1||Cu(In,Ga)Se2:1||Cu(In,Ga)Se2 (CIGS):1||Cu2O:1||CuGa:1||CuGaSe2 (CGS):1||CuInGa:1||Defect control:1||Dielectric material:1||Dielectric properties:1||Diffusion barrier layer:1||Dry etching:1||EEDF:1||ESS:1||Electrode:1||Electroluminescence device:1||Electrospinning:1||Etching mechanism:1||Fbased plasma:1||FEAES:1||FESEM:1||Ferroelectric properties:1||Field emission Auger electron spectroscopy:1||Film thickness:1||Fluorinedoped tin oxide film:1||Gold nanoparticle:1||Graphene:1||Growth:1||HBr/Ar:1||HCL plasma:1||HF cleaning:1||Hafnium aluminum oxide:1||Hazardous Gas Sensor:1||He:1||High density:1||High density plasma:1||High dielectric constant materials:1||Highk Dielectric:1||Highk materials:1||Hydrochloric acid:1||ICR:1||IZO:1||Image Sensor (이미지 센서):1||Impregnated Palladium:1||InGaSnO:1||Indium tin oxide:1||Inductively Coupled Plasma:1||Inert gas:1||Inkjet printing:1||Ionization:1||LSCO:1||Langnmir probe:1||Liion cell:1||Light Guide (광 통로):1||Light Sense (시각):1||MEICP:1||MFIS 전계효과 트랜지스터:1||MFISFET:1||MRAM devices:1||Magnetoconductance:1||Mesoporous Tin Oxide:1||Metal:1||Metal to semiconductor transition:1||Modeling:1||Multilayer Structure:1||Mxenes:1||N 2:1||Nanohole:1||Nitrogen:1||Nonvolatile memory device:1||O2 Furnace Annealing:1||O2 annealing:1||O2 plasma:1||

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