CAU Scholar's Space: Kim, Min Hwi

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Kim, Min Hwi (김민휘)

창의ICT공과대학 (전자전기공학부)

Research Area: Next Generation Memory Devices, High-speed and Low-power Memory Array, Devices and Circuits for Practical Neuromorphic System

Tel 02-820-5574
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synaptic device:7||RRAM:7||resistive switching:6||silicon nitride:6||Switches:4||Resistive randomaccess memory (RRAM):3||Resistive switching:3||Silicon nitride (Si3N4):3||Silicon:3||memristor:3||neural network:3||Memristor:3||hardwaredriven artificial intelligence:2||artificial synapses:2||synaptic function:2||Hardware:2||Resistiveswitching randomaccess memory:2||boron nitride:2||lowpower:2||vectormatrix multiplication:2||resistiveswitching random access memory (RRAM):2||conductive filament:2||memristors:2||selfcompliance:2||nanowedge:2||crosspoint array architecture:2||neural networks:2||Spacechargelimited current (SCLC):2||Neuromorphic:2||Synapses:2||flexible memristors:2||Synaptic device:2||synapse:2||Memory:1||Memristors:1||Monte Carlo simulation:1||Multilevel cell (MLC):1||Nanoscale devices:1||Negative set:1||Neural network simulation:1||Neuromorphic system:1||Neuromorphics:1||Neurons:1||Nickel alloys:1||Nonlinearity:1||OTS:1||Potentiation:1||Pulse operation:1||RBM:1||Random access memory:1||Rapid thermal oxidation (RTO):1||Reset Transition:1||Resistive Switching:1||ResistiveSwitching Random Access Memory:1||Rush Hour game:1||SPICE:1||Selector:1||Selfrectification:1||Semiconductor device measurement:1||Shortterm memory:1||Sirich nitride (SiNx):1||Si3N4:1||Si3N4 Based RRAM:1||Si3N4based RRAM:1||Silicidation:1||Silicides:1||Silicon compounds:1||Silicon nitride:1||Silicon oxide:1||Spike ratedependent plasticity (SRDP):1||Switching mechanism:1||Synaptic devices:1||Synaptic plasticity:1||TMAH:1||TiOx:1||Tin:1||Tunneling barrier layer:1||Vanadium:1||WOx RRAM:1||XPS:1||ZnO:1||analog resistive switching:1||and Pattern Recognition:1||array:1||artificial neural network (ANN):1||artificial synapse:1||atomic layer deposition:1||bias polarity:1||bipolar analog resistiveswitching characteristics:1||conductive nanofilament:1||copper:1||crosspoint arrays:1||crossbar array:1||density function theory:1||depression:1||electroforming process:1||gradualswitching:1||hardware neural network:1||hardware neuromorphic:1||hardwaredriven neuromorphic system:1||highk dielectric:1||interfacial layer (IL):1||internal overshoot current:1||low energy consumption:1||lowpower memristor:1||memory:1||nanocone:1||nanowedge resistive random access memory (RRAM):1||neuromorphic application:1||neuromorphic computing:1||neuromorphic system:1||neuromorphic systems:1||nickel silicidation:1||nonlinearity:1||one selectorone memory:1||organic memristors:1||organic resistive switching device:1||oxide memristor:1||parallel computation:1||potentiation:1||reinforcement learning (RL):1||reset breakdown:1||resistive RAM (RRAM):1||resistive randomaccess memory (RRAM):1||resistive switching randomaccess memory:1||resistiveswitching randomaccess memory:1||resistiveswitching randomaccess memory (RRAM):1||scaling:1||selfselectivity:1||sequential task:1||silicon nitride (Si3N4):1||silver:1||spikeratedependent plasticity:1||spiketimingdependent plasticity:1||spiking neural network:1||spiking neural network (SNN):1||spiking neural networks:1||stochastic neuron:1||switching and conduction mechanism:1||switching layer:1||switching parameters:1||switching process:1||synapse device:1||synaptic devices:1||synaptic memory component:1||synaptic plasticity:1||thermal recovery:1||top electrode (TE):1||transient memristors:1||uniformity:1||25% tetramethylammonium hydroxide (TMAH):1||weight transfer:1||3D Vertical Structure:1||3D vertical structure:1||Abrupt reset:1||ActionPotential:1||Amorphous indium gallium zinc oxide:1||Artificial neural network (ANN):1||Biological neural networks:1||Bipolar resistive switching:1||Bipolar switching:1||CBRAM:1||Circuit model:1||Compliance current:1||Conductivity:1||Crosspoint array:1||Density functional theory:1||Depression:1||Dopant concentration:1||Endurance:1||Fabrication:1||Film thickness:1||Games:1||Gradual reset:1||Gradual resistance switching:1||Gradual switching:1||HfO2/Al2O3:1||HfOx:1||I&F Neuron Circuit:1||ITO electrode:1||Immune system:1||Integrated circuit modeling:1||MIS (MetalInsulatorSemiconductor) RRAM:1||MIS structure:1||

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84, Heukseok-ro, Dongjak-gu, Seoul, Republic of Korea (06974)02-820-6194

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