CAU Scholar's Space: Song, Sang Hun

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Song, Sang Hun (송상헌)

창의ICT공과대학 (전자전기공학부)

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Tel 02-820-5343
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MRAM:3||Vibrational mode:2||Indiumgalliumzinc oxide (IGZO):2||Ptype SnO TFTs:2||Sensors:2||Optical detection:2||Tuning fork crystal oscillator:2||thinfilm transistors (TFTs):2||Gateallaround (GAA):2||MTJ:2||Cl2/Ar:1||Collapsing:1||Corbino structure:1||Correlated Carrier NumberMobility Fluctuation Model:1||Current mode:1||D. cyclotron resonance:1||Doped Er:1||Dry etching:1||Energy harvesting:1||Equivalent circuit:1||Frequency response:1||Gate all around (GAA):1||Hall offset voltage:1||Hall voltage:1||Halleffect sensor:1||IGTO TFT:1||IGZO:1||IGZO TFT:1||Inverter:1||Lead Frame:1||Leakage Current:1||Logic Circuit:1||Logic Threshold Voltage:1||LowFrequency Noise:1||MEMSMOSFET hybrid switch:1||MFIS:1||Mg suppression layer:1||MgO:1||Mobility:1||NAND:1||NO2 gassensing:1||NO2 sensing:1||Nanobubble:1||NearInterface Insulator Trap:1||Noise Margin:1||Offset cancelling:1||Operation characteristics:1||Oxygen interstitial:1||Oxygen percentage:1||Oxygen vacancy:1||PType SnO TFTs:1||Ptype semiconducting gas sensor:1||PECVD SiOx:1||Power management circuit:1||QFP:1||RFmagnetron sputtering:1||Radio Frequency:1||Sparameters:1||SPICE MacroModel:1||Selfreferencing:1||Sense Amplifier:1||Sense amplifier:1||Sensor:1||Smart grid:1||SnOSnO2 pn heterojunction:1||Stabilities:1||Stability:1||Subthreshold:1||Temperature:1||Thinfilm:1||Tuning fork:1||Ultralow leakage:1||Ultrasonic Wave:1||Voltage Transfer Funciton:1||Wheatstone bridge circuit:1||Wireless sensor nodes:1||aIGTO thinfilm:1||aITZO TFT:1||aIZTO TFT:1||bulk trap:1||carbondoped GaN back barrier:1||channel width:1||charge trapping:1||complementary logic inverter:1||conduction band edge energy profile:1||crystal oscillators:1||electrical performances and stabilities:1||electrical stability:1||electronic trap:1||environmental oxygen:1||environmental water:1||equivalent circuits:1||gate insulator:1||high current driving condition:1||high voltage gain:1||infinite output resistance:1||insulators:1||interface trap charge:1||localizedtrapstates model:1||memory window:1||metalinsulator transition:1||mobility:1||mobilitydegradation factor:1||multifrequency capacitancevoltage (CV) method:1||nchannel InGaZnO (IGZO):1||nanowire:1||negative gate bias stresses:1||output curve:1||oxygen content:1||oxygen vacancy:1||ptype SnO TFT:1||ptype copper oxide (Cu2O) thinfilm transistors (TFTs):1||percolation conduction:1||planar device:1||positive gate bias stresses:1||prebias measurement technique:1||quantitative analysis:1||quantum Hall effect:1||random telegraph noise (RTN):1||reliability:1||resonant tunneling:1||selfassembled quantum dot:1||selfheating stress:1||semiinsulating GaN buffer:1||series resistance:1||silicon:1||silicon nanowire FET (SNWFET):1||silicon nanowire fieldeffect transistor (SNWFET):1||subgap states:1||subthreshold degradation:1||temperature dependence:1||thinfilm transistor:1||thinfilm transistor (TFT):1||A. semiconductors:1||trap state creation:1||ACP:1||Admittance:1||Al2O3:1||AlGaN/GaN HFET:1||Amorphous indiumgalliumzincoxide (aIGZO):1||BLT:1||Biasstressinduced instability:1||Bonding Wire:1||CMOS:1||

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