CAU Scholar's Space: Yoon, Young Gui

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Yoon, Young Gui (윤영귀)

자연과학대학 (물리학과)

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Tel 02-820-5238
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Energetics:6||platinum diselenide:3||Molecular dynamics:3||Thermal conductivity:3||InAs:3||HOMOLUMO:2||Interfacedriven Seebeck effect:2||AlAs:2||Strain:2||Si(100):2||inplane Seebeck effect:2||Defect:2||Methylguanine:2||GaAs:2||MoS2:2||carbon:2||van der Waals:2||nanotube:2||Optical phonon:2||Platinum diselenide:2||GaSb:2||Raman spectroscopy:2||Charge doping:2||D. Optical absorption:1||DNA base:1||Density functional theory:1||Density functional thoery:1||Diffusion:1||Dimethylguanine:1||Effective mass:1||EhrlichSchwoebel barrier:1||Energy Barrier:1||Exciton:1||FieldEffect Mobility:1||Formation energy:1||Guanine:1||Hexagonal boron nitride:1||Homostructure:1||Hugoniot:1||IVVI Materials:1||InSb:1||Interatomic potential:1||Interface:1||Methyladenine:1||Methylcytosine:1||Methylthymine:1||MoS2:1||Modified Callaway Model:1||Monolayer:1||Mott formula:1||Mott relation:1||Nitride materials:1||Ohmic Contacts:1||Oxygen plasma treatment:1||Phonon boundary scattering:1||Phonon drag:1||PhononBoundary Scattering:1||Photoassisted MOCVD:1||Photoluminescence:1||Platinum ditelluride:1||Quintuple layers:1||Sb2Te3:1||Sb2Te3:1||Schottkybarrierfree contact:1||Seebeck coefficient:1||Si:1||Si(111):1||Silicon Nanowires:1||Silicon nanowires:1||Sondheimer Model:1||Stacking fault:1||StoneWales:1||Superlattice:1||Surfaces and interfaces:1||Thermal Conductivity:1||Thermal Resistance:1||Thermal Transport:1||Transient Metal Chalcogenide:1||Transition metal dichalcogenide:1||Transition metal oxide:1||Tungsten disulfide:1||Vapor deposition:1||Xray diffraction:1||ZnS:1||adatom diffusion process:1||antimony compounds:1||band structure:1||charge transfer:1||density functional theory:1||density of states:1||energy filtering effect:1||exciton:1||ferromagnetic insulator:1||germanium compounds:1||heat current:1||heterojunction structure:1||homostructure:1||homostructure and heterostructure:1||hot carrier injection:1||hotcarrier injection:1||interfaceinduced Seebeck effect:1||interfacial Seebeck effect:1||longitudinal spin Seebeck effect:1||magnetic proximity:1||molybdenum disulfide:1||nanostructured materials:1||outofplane thermoelectric properties:1||peapod:1||perturbation:1||phase change memories:1||phonon scattering:1||phonon transport:1||polarizability:1||single layer graphene:1||spin mixing conductance:1||spin transport:1||stepped surface:1||surface magnetic anisotropy:1||ternary semiconductors:1||thermal conductivity:1||thermoelectric devices:1||thermoelectricity:1||tightbinding:1||transition metal dichalcogenide:1||transverse Seebeck coefficients:1||twodimensional transitionmetal dichalcogenide:1||van der Waals contacts:1||111:1||work function:1||2D heterostructure:1||2D homostructure:1||3omega Technique:1||A. Amino acid:1||A. CdSe:1||A. Glycine:1||A. ZnS:1||A. ZnSe:1||AlSb:1||Aluminum:1||Atomic structure:1||BN:1||Bi2Te3:1||Bismuth:1||CIGS solar cell:1||Callaway Model:1||Carbon Nanotube:1||Charge transfer:1||Coherent phonon transport:1||D. Electronic structure:1||D. Hydrogenbond:1||D. NMR chemical shift:1||

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