CAU Scholar's Space: Kwon, Hyuck In

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Kwon, Hyuck In (권혁인)

창의ICT공과대학 (전자전기공학부)

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Tel 02-820-5293
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thinfilm transistor:8||thinfilm transistors (TFTs):6||SnO:5||thinfilm transistor (TFT):5||electrical stability:4||Ptype SnO TFTs:4||lowfrequency noise (LFN):4||Thinfilm transistor:4||Amorphous indiumgalliumzincoxide (aIGZO):3||IGTO TFT:3||oxygen vacancy:3||thin film transistors:3||ptype SnO TFT:3||AIGZO TFT:3||IGZO TFT:3||thinfilm transistors:3||Xray irradiation:2||instability:2||inverter:2||Xray photoelectron spectroscopy:2||electric field:2||Amorphous indiumgalliumzinc oxide (aIGZO):2||Tin oxide:2||InGaZnO:2||longterm stability:2||LowFrequency Noise:2||lowfrequency noise:2||Oxygen vacancy:2||random telegraph noise (RTN):2||mobility fluctuation:2||High specific capacitance:2||Lowfrequency noise:2||zinc oxynitride thinfilm transistor:2||Indiumgalliumtin oxide:2||environmental water:2||charge trapping:2||selfheating:2||Indiumgalliumzinc oxide (IGZO):2||MeyerNeldel rule:2||semiconductor thin films:2||gallium compounds:2||defective ZnXNY bond:2||amorphous semiconductors:2||IGZO:2||WSe2 TFT:2||Junctionless:2||NAND Flash memory:2||subgap density of states:2||hydrogen:2||indium compounds:2||Dopamine:1||Doped Er:1||Doublegate MOSFETs:1||Doublegate aIGZO TFTs:1||Drift free:1||DualMaterial Gate Structure:1||Electrical Performance Degradation:1||Electrical performance and stability:1||Electrical properties:1||Electrical stability:1||Electrochemical properties:1||FETtype sensor:1||Field effect transistors:1||FieldEffect Transistors (FETs):1||Film thickness:1||Films:1||Flexible IGZO TFTs:1||Flexible transistor:1||Floating gate:1||Floating gate (FG):1||GAA:1||GaN:1||Gate dielectric:1||Gateallaround:1||Ge/GaAs heterojunction:1||Good cyclic stability:1||Hall voltage:1||Halleffect sensor:1||Heterostructure:1||HfO2:1||High energy density:1||High power density:1||Highk Al2O3:1||Highk Dielectric:1||Humidity sensor:1||Hybrid Complementary Logic Inverter:1||Hydrogen plasma treatment:1||IGZO TFTs:1||IIIV Compound Semiconductor:1||ITO:1||InGaSnO (IGTO):1||InGaZnO:1||InGaZnO (IGZO):1||In2O3:1||InAs:1||InGaSnO:1||Indium Tin Oxide and Single Walled Carbon Nanotubes:1||Inkjet printing:1||Inorganic solid electrolyte:1||Interfacial layer:1||Junctionless Transistor:1||LEDs light up:1||Large Voltage Gain:1||Large operating potential window:1||Lowfrequency C–V characteristics:1||Lowstandby power:1||Metal capping layer:1||Mg suppression layer:1||MoS2:1||Mobility:1||Modeling:1||NO2 gas sensing:1||NO2 gas sensor:1||NO2 gassensing:1||NO2 sensing:1||NO2 sensor:1||Nanoelectromechanical (NEM) Relay:1||Nanoscale:1||NearInterface Insulator Trap:1||Negative bias illumination stress stability:1||Ni Electrode:1||O2 flow rate:1||O2 flow rate (OFR):1||OffState Stresses:1||Offset cancelling:1||Operation characteristics:1||Optical detection:1||Oxide TFT:1||Oxygen interstitial:1||Oxygen percentage:1||Oxygen vacancies:1||PType SnO TFT:1||PType SnO TFTs:1||Pchannel SnO TFTs:1||Pchannel thinfilm transistor:1||Ptype metal oxide semiconductor:1||Ptype semiconducting gas sensor:1||Ptype tin monoxide (SnO):1||Ptype transistor:1||PBTS:1||PECVD SiOx:1||Passivation:1||Perovsldtes:1||Petallike MoS2 nanostructures:1||Phonon Scattering:1||Photosensor:1||Piezoelectric properties:1||Positive bias stress stability:1||Proton beam:1||Proton irradiation:1||Pulse measurement:1||Q3D Extractor:1||RF Performance:1||RFmagnetron sputtering:1||Radiation hardness:1||Radiation tolerance, Atomic displacement cascades:1||Rapid thermal annealing temperature:1||Reconfigurable Logic:1||SCLC:1||SPICE:1||SS:1||SU8 passivation layer:1||SWNT:1||SWNT electronics:1||Saddlegate:1||Sensors:1||Short channel:1||SiMOSFET sensor:1||SiOC:1||Silicon doping:1||Silicon zinc tin oxide:1||Sintering:1||SnO TFTs:1||SnOSnO2 pn heterojunction:1||SnOX:1||SnOX TFT:1||Solidstate supercapacitor:1||Solvothermal method:1||Source/Drain Parasitic Resistance:1||SpaceChargeLimited Current:1||Specific capacitance:1||Stabilities:1||Stability:1||Strain modulation:1||Subgap Density of States:1||Subgap density of states:1||Supercapacitor application:1||TCAD:1||TFET:1||Tellurium:1||Thin film:1||Thin film transistor:1||ThinFilm Transistor (TFT):1||ThinFilm transistor:1||Thinfilm:1||Thinfilm transistors:1||Touch Screen Panel:1||Traditional ceramics:1||Transition metal dichalcogenide:1||Trapped electron distribution:1||Tungsten Selenide (WSe2):1||Tuning fork crystal oscillator:1||Tunneling fieldeffect transistor (TFET):1||Tunneling fieldeffect transistors:1||TwoDimensional:1||Undoped GaN (uGaN) Capping Layer:1||VerilogA:1||Vertically stacked complementary logic inverter:1||Vibrational mode:1||Wheatstone bridge circuit:1||WindowUnified CapacitiveType Touch Screen Panel:1||Work function:1||Xray methods:1||XRD:1||Xe flash lamp:1||Zinc Oxynitride (ZnON):1||Zinc oxynitride:1||Zinc oxynitride (ZnON):1||ZrO2:1||aIGTO thinfilm:1||aIGZO:1||aITZO TFT:1||aIZTO TFT:1||aZnON TFTs:1||acoustic phonon scattering:1||airannealing:1||alumina:1||amorphous oxide semiconductor (AOS):1||annealing:1||annealing atmosphere:1||argon plasma treatment:1||asymmetric degradation:1||asymmetrical degradation:1||atomic layer deposition (ALD):1||band tail states:1||bias illumination stress:1||bias stress stability:1||bulk FinFET:1||bulk accumulation channel:1||bulk channel:1||bulk trap:1||carbondoped GaN back barrier:1||carrier mobility:1||channel width:1||charge transport mechanism:1||circuit design:1||complementary logic inverter:1||copper iodide:1||corner effect:1||correlated number fluctuationmobility fluctuation model:1||current and capacitance models:1||degradation:1||density of bulk trap states:1||density of interface trap states:1||depletion mode:1||device simulation:1||dielectric devices:1||diffusion:1||doublegate:1||doublegate (DG):1||drift:1||electrical contacts:1||electrical performance:1||electrical performance and stability:1||electrical performances and stabilities:1||electronic density of states:1||electronic trap:1||environmental oxygen:1||etching mechanism:1||excessive oxygenperoxidebased model:1||f noise:1||fieldeffect mobility:1||fintype fieldeffect transistor (FinFET):1||floating Ni capping layer:1||fluctuations:1||gate dielectrics:1||gate insulator:1||high current driving condition:1||high mobility:1||high voltage gain:1||horizontal electric field:1||humidity:1||indiumgalliumtin oxide:1||infiltration synthesis:1||infinite output resistance:1||iodine vacancy:1||junctionless fieldeffect transistor (JL FET):1||light illumination:1||local degradation:1||localizedtrapstates model:1||longterm durability:1||low temperature:1||lowpower (LP) performance:1||mobility:1||modeling:1||multifrequency capacitancevoltage (CV) method:1||nanowire structures:1||negative bias illumination stress:1||negative bias illumination temperature stress (NBITS):1||negative gate bias stresses:1||optimal design:1||optimal thickness:1||organicinorganichybrid passivation layer:1||output curve:1||oxygen content:1||oxygenvacancy related trap:1||pAlGaN Gate HFETs:1||pGaN Gate AlGaN/GaN Heterostructure FieldEffect Transistors:1||pType semiconductor:1||pchannel SnO:1||ptype copper oxide (Cu2O) thinfilm transistors (TFTs):1||ptype metal halide:1||ptype metaloxide semiconductor:1||ptype oxide thinfilm transistor:1||passivation layer:1||percolation conduction:1||phonon scattering:1||photoconductivity:1||plasma etching:1||position dependence:1||positive bias stress:1||positive gate bias stresses:1||potential:1||prebias measurement technique:1||program/erase (P/E) cycling:1||proton irradiation:1||pulse repetition number:1||quantitative analysis:1||radiation robustness:1||radiation stability:1||radiation tolerance:1||realistic operating condition:1||recessed gate:1||reliability:1||remote phonon scattering:1||resistive random access memory (RRAM):1||resistive switching:1||selfheating stress:1||semiinsulating GaN buffer:1||semiconductor device models:1||semiconductor device noise:1||sensing mechanism:1||short channel effect:1||shortchannel effect (SCE):1||simulation:1||simultaneous gate and drain bias stresses:1||simultaneous mechanical and electrical stress:1||solution processability:1||solutionprocessed metal oxides:1||spacechargelimited current:1||sputter:1||stress:1||subgap density of states (DOS):1||subgap states:1||surface modification:1||tellurium:1||temperature:1||temperaturedependent fieldeffect characteristics:1||ternary semiconductors:1||thermal annealing temperature:1||thin film transistor:1||threshold voltage fluctuation:1||threshold voltage shift:1||thresholdvoltage fluctuation:1||tin oxide:1||transconductance:1||trap state creation:1||traplimited conduction:1||triplegate:1||ultraviolet (UV)after thermal annealing:1||vertical tunneling operation:1||water treatment:1||weakly bonded oxygen species:1||workfunction:1||zinc compounds:1||1:1||γphase CuI/Al2O3 heterojunction:1||1/f noise:1||1/f noise theory:1||2D In2O3 nanodiscs:1||3D TCAD:1||APTES:1||Active layer thickness:1||Al capping layer:1||Al2O3 gate dielectric:1||Al2O3 passivation layer:1||Al2O3capping layer:1||AlGaN/GaN:1||AlGaN/GaN HFET:1||AlGaSb/InGaAs:1||Ambipolar behavior:1||Amorphous indiumgalliumzinc oxide (aIGZO) thinfilm transistors (TFTs):1||Amorphous indiumgalliumzincoxide (IGZO):1||Amorphous oxide semiconductor:1||Arch Shape:1||Band alignment:1||Bandtoband tunneling (BTBT):1||Biasstressinduced instability:1||Biosensors:1||Broken energybandgap:1||CMOS logic circuits:1||CO2:1||Capacitance Change:1||Carnation flowerlike SnS2:1||Carrier transport mechanism:1||Charge Transport Mechanism:1||Charge Trapping:1||Cl2based plasma:1||Conduction mechanism:1||Corbino structure:1||Correlated Carrier NumberMobility Fluctuation Model:1||CrossSquare Pattern:1||Cu:1||Current Collapse:1||Cyclic Voltammetry:1||Cyclic stability:1||DIBL:1||DUV irradiation:1||Defect engineering:1||Density of Interface and Bulk Trap States:1||Density of bulk trap states:1||Density of interface trap states:1||Deposition temperature:1||Design optimization:1||Diamond Pattern:1||Dielectric properties:1||

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