CAU Scholar's Space: Park, Sung Kyu

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Park, Sung Kyu (박성규)

창의ICT공과대학 (전자전기공학부)

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Tel 02-820-5347
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solution process:10||thinfilm transistors:10||amorphous oxide semiconductors:9||thinfilm transistor:7||quantum dots:7||Thinfilm transistors:6||photochemical activation:6||thinfilm transistors (TFTs):5||Solution process:5||TIPSpentacene:4||phototransistors:4||metaloxide semiconductors:3||high mobility:3||optoelectronics:3||pattern recognition:3||Thinfilm transistors (TFTs):3||aIGZO:3||Organic thin film transistor:3||indiumgalliumzinc oxide:3||stretchable electronics:3||High mobility:3||flexible:3||low temperature:3||flexible electronics:3||Quantum dots:3||printed electronics:2||thin film transistor:2||machine learning:2||thinfilm transistor (TFT):2||optoelectronic synapses:2||mechanical stability:2||room temperature:2||transistors:2||Silver Nanowires:2||ITO film:2||metal chalcogenide:2||Metaloxide semiconductors:2||IGZO:2||Lowfrequency noise:2||diFTESADT:2||oxide semiconductors:2||amorphous IGZO:2||singlewalled carbon nanotubes (SWCNTs):2||passivation:2||pattern:2||zinctinoxide (ZTO):2||Iongel:2||Stability:2||ligand exchange:2||solution processing:2||gas sensor:2||monolithic passivation:2||Thin Film Transistor:2||Photonic neurotransistors:2||heterojunction phototransistors:2||photodetectors:2||etextile:2||stress:2||photonic devices:2||Inkjet printing:2||stretchable sensor:2||Flexible electronics:2||ThinFilm Transistors:2||poly (3hexylthiophene):2||neuromorphic computing:2||polymer substrate:2||electronic textiles:2||position:2||bending:2||Thinfilm transistor:2||Gadoped In2O3:1||Gadoliniumdoped hafnium oxide:1||Gate Dielectric:1||Gate dielectrics:1||Hall mobility:1||Heterogeneous semiconducting structure:1||Heterojunction channel:1||Heterostructure:1||Hexagonal boron nitride:1||High Aspect Ratio:1||Highk:1||Highk dielectric:1||Hot carrier:1||Hybrid photosensor array:1||Hydrogenassisted annealing:1||IV behavior:1||IV characteristics:1||IGZO transistor:1||IGZOCapped:1||IIVI semiconductor materials:1||IIVI semiconductors:1||ISZO:1||ITZO:1||Insensor computing:1||InP QDs:1||Indium tin oxide:1||IndiumZincTinOxide:1||Indiumgalliumzincoxide:1||Inkjet printing:1||Inorganicorganic hybrid:1||Ion gel gate dielectric:1||Ionic liquid:1||Ionotronic:1||Ir(mppy)(3):1||Lanthanum aluminum oxide:1||Lanthanumdoped aluminum oxide:1||Lightguide plate:1||Linearity:1||Lithium cobalt oxide:1||Low temperature:1||Low temperature solutionprocess:1||LowVoltage:1||Lowtemperature polycrystalline silicon (LTPS):1||Lowtemperature process:1||MIM:1||Memristors:1||Mercuryfree lamp:1||Mesoscale:1||Metal Oxide:1||Metal oxide:1||Metal oxides:1||MetalOxide:1||Metalchalcogenide semiconductor:1||Metaloxide (MO) semiconductors:1||Metallic capping layer:1||Metals:1||Metastable Bi2Sn:1||Mg diffusion:1||Multisensory system:1||Multispectral synaptic response:1||Multistacked:1||Multicolor coverage:1||Multimodal sensors:1||Multistacked coupled quantum well:1||Na:ZnO:1||Nanocrystalline tellurium:1||Nanoparticles:1||Nanoplate:1||Nanotechnology:1||Nearsensor computing:1||Negative differential resistance:1||Neuromorphic device:1||Neuromorphic devices:1||Neuromorphic vision sensor:1||Neuronal dendritic computation:1||Neutral layer:1||Nonreliefpatterned surface patterning:1||OneDimensional Filler:1||Operational stability:1||Optoelectronic synapse:1||Optoelectronic synapse arrays:1||Optoelectronic synaptic circuit:1||Optoelectronic transistor:1||Organic FieldEffect Transistor:1||Organic Memory:1||Organic Single Crystal:1||Organic buffer layer:1||Organic circuits:1||Organic crystal:1||Organic field effect transistor:1||Organic phototransistor:1||Organic thin film transistors:1||Organic thinfilm transistor:1||Oxide nanowire:1||Oxide semiconductors:1||Oxide thinfilm transistors:1||Oxygen:1||Oxygen vacancy:1||PBD:1||PBS Stability:1||PEDOT:1||PLED:1||PVDFHFP:1||PVK:1||Passivation:1||Passivation effect:1||Pattern recognition:1||Perfluoropolymer:1||Persistent photoconductance, metaloxide semiconductors:1||Persistent photoconductivity:1||Photooxidation:1||Photostability:1||Photochemical Activation:1||Photochemical Annealing:1||Photochemical activation:1||Photoinduced Writing:1||Photonic synapse:1||Photoresistfree process:1||Photothermal annealing:1||Phototransistor:1||Phototransistors:1||Poisson effect:1||Polyhedral oligomeric silsesquioxane:1||Polymer blending:1||Polymer gate dielectric:1||Polymer solar cell:1||Polymer substrate:1||Poolefrenkel:1||Powerefficiency:1||Pressure sensors:1||Printed electronics:1||QDLEDs:1||Quantum confinements:1||RGBtoblack:1||Reflector:1||Regression model:1||Resistive switching behaviour:1||Resonant tunneling diodes:1||Ring oscillator:1||Roll Pressing:1||Rolltoroll process:1||Rollable metal oxide TFT:1||Room temperature:1||Room temperature growth:1||SelfAssembled Monolayer (SAM):1||Selfaligned:1||Semiconductortype gas sensor:1||Sensor system:1||Sensors:1||Sheet Resistance:1||Singlecrystal organic semiconductor:1||Sn diffusion:1||SnPb binary:1||SnS2:1||SnSe2:1||SnSxSe2−x:1||Solgel chemistry:1||Solidstate thin film battery:1||Solution Process:1||Solution Processing:1||Solution combustion synthesis:1||Solution processing:1||SolutionProcessed Oxide:1||SolutionProcessed Oxide Semiconductors:1||Solutionprocessed metaloxide gate dielectrics:1||Solutionprocessing:1||Solvents:1||Sputtering technology:1||Stacking sequence:1||Stress relaxation:1||Stretchability:1||Strontium Nitrate:1||Subthreshold Slope:1||Surface morphology:1||Surface treatment:1||Suspended topcontact:1||Synapses:1||Synaptic parameters:1||TCAD simulation:1||TCAD simulations:1||TaOx memristors:1||Teflon:1||Thermal annealing:1||Thin film:1||Thin film transistor:1||Thin film transistors:1||ThinFilm Transistor:1||Thinfilm encapsulation:1||Ti doping:1||TiO <sub>2</sub>/IGZO heterostructures:1||TiOx:1||Topgate:1||Tungsten disulfide:1||UV treatment:1||UVLED:1||Ultrasonication:1||Vacuum deposition:1||Viologen:1||Wearable device:1||ZITO:1||ZTO TFTs:1||ZnSnO:1||Zr<sub>6</sub>oxo cluster thinfilm:1||aAl2O3:1||aIGZO TFTs:1||aLiLaZrO:1||activation treatments:1||activematrix organic lightemitting diode (AM OLED) display:1||activematrix sensors:1||alloptical neuromorphic devices:1||allsolution processed transparent largescale electronics:1||alternative photoconversion:1||aluminumoxo cluster:1||amorphous indiumgalliumzincoxide:1||amorphous ionconducting layers:1||amorphous oxide thinfilm transistors:1||amorphous semiconductors:1||anion alloying:1||annealing:1||artificial retinas:1||artificial sensory systems:1||artificial skins:1||artificial solidstate synapses:1||artificial vision systems:1||bank structure:1||batch process:1||bidirectional synaptic modulation:1||bilayer:1||biosensor applications:1||cAxis aligned crystalline:1||cadmiumselenide:1||capacitive pressure sensors:1||carbon nanotubes:1||catalytic metalsaccelerated crystallization:1||cathode coatings:1||chalcometallate ligands:1||circuit:1||colloidal quantum dots:1||color perception:1||color recognition:1||color selective imaging:1||combustion synthesis:1||complelentary metaloxidesemiconductor (CMOS) integrated circuits:1||complementary amplifier:1||complementary circuit amplifiers:1||composition ratios:1||conducting fiber:1||conformable robotics:1||contact area:1||controllable threshold voltage:1||corrugated structures:1||cosputtering:1||crossreactive sensor matrixes:1||current amplification circuits:1||deep UV irradiation:1||deep ultraviolet:1||derivative spectroscopy:1||device structures:1||dielectric barrier discharge:1||dielectric loss:1||diffusion and convection:1||direct surface modification:1||direction recognition:1||discharge flat:1||doping:1||dual fuel:1||duallayer dielectric:1||elastic conductive particles:1||electric double layer:1||electric double layer (EDL):1||electronic skin:1||etchfree process:1||ethanolamine:1||fiber transistors:1||fiberbased batteries:1||fiberbased electronics:1||fiberbased sensors:1||fiberbased transistors:1||fiberbased wearable electronics:1||fieldeffect transistor:1||finiteelement analysis:1||flexible amplifier circuits:1||flexible display:1||flexible electrode:1||flexible optoelectronics:1||flexible photodetectors:1||flexible printing devices:1||fluidic channel:1||fluoropolymer passivation:1||full color QLEDs:1||gate dielectric layer:1||heterointerfaces:1||heterojunction structure:1||heterostructure phototransistors:1||high purity SWCNT separation process:1||highefficient patterning:1||historical averaging:1||hybrid gate dielectric:1||hysteresisfree:1||in situ:1||in situ STEM analysis:1||in situ polymerization:1||indium gallium zinc oxide:1||indium tin oxide:1||indiumgalliumzincoxide:1||indiumtinoxide:1||indiumzinc oxide:1||inkjet printing:1||inkjet printing:1||inorganic perovskites:1||insulatortosemiconductor transition:1||ion gel:1||iongel:1||ionic electrolyte transistor:1||ionic liquid:1||ionotronic synaptic transistors:1||lamp (DFL):1||lattice stabilization effect:1||light activation:1||light intensity:1||lightadjustable neuromorphic circuits:1||liquidcontactelectrification:1||lithiumion batteries:1||lithography:1||logic circuits:1||low temperature solutionprocess:1||lowtemperature crystallization:1||lowtemperature functionalization:1||lowtemperature metal oxide:1||lowtemperature processing:1||lowtemperature solgel method:1||lowvoltage operation:1||luminance efficiency:1||machine learned strain sensors:1||machinelearning sensors:1||magnesium (Mg) doping:1||meniscus movement:1||mesa structure:1||mesaisland structure:1||metal chalcogenide ligands:1||metal doping/diffusion:1||metal ionic radius:1||metal oxide:1||metal oxide TFT:1||metal oxide semiconductor and dielectric:1||metal oxide semiconductors:1||metal oxides:1||metalinsulatormetal:1||metaloxide thinfilm transistors:1||metallic capping layers:1||metallic composition:1||microcontact printing:1||molecular metal chalcogenide ligands:1||monolithic integration:1||morphology:1||multicomponent oxide semiconductors:1||multilevel memory:1||multiple nonvolatile detection:1||multivalued atomic switching:1||nanocluster:1||nanoflowers:1||nanomaterials:1||neighborhood consensus network:1||neural networks:1||nonhydrazine:1||omnidirectional strain sensors:1||operation stability:1||opticaldoping:1||optically driven synaptic device:1||optoelectronic devices:1||optoelectronic neuromorphic systems:1||organic crystal:1||organic molecules:1||organic single crystal arrays:1||organic single crystals:1||organic thin film transistor:1||organic thin film transistors:1||organic thinfilm transistor (OTFT):1||organic transistor:1||organic/oxide heterogeneous circuits:1||oxide gate dielectric:1||oxide semiconductor:1||oxide solutionprocessing:1||oxide thinfilm transistors:1||oxygen:1||oxygenvacancy control:1||pType transistor:1||ptype:1||pentacene:1||persistent photoconductivity:1||photosynaptic plasticity:1||photoactivation:1||photochemical activation 2,8difluoro5,11bis (triethylsilylethynyl). anthradithiophene:1||photochemical process:1||photochemical reaction:1||photochemically driven combustion process:1||photodetector arrays:1||photonic deactivation:1||photonic neuromorphic devices:1||photonic synapses:1||photopic and scotopic adaptation:1||phototransistor:1||plastic substrate:1||plastic substrates:1||poly(vinylidene fluoride) copolymer:1||polymer substrateTa2O5IV behaviorsymmetry characteristicsmetalinsulatormetal:1||polymer thinfilm transistor (TFT):1||polymers:1||pressure sensor:1||pressure sensors:1||quantum dot lightemitting diode (QDLED):1||quantumdot lightemitting diodes:1||radiation hardness:1||radical reaction:1||rapid thermal annealing:1||ring oscillators (ROs):1||rubber stamp printing:1||scalability:1||scanning photocurrent microscopy:1||selective dewetting:1||selfassembled monolayer:1||semantic correspondence:1||semiglobal selfsimilarity:1||semiconductor:1||semiconductors:1||2,7dioctyl[1]benzothieno[3,2b][1]benzothiophene (C8BTBT):1||sensors:1||side gate geometry:1||singlewalled carbon nanotube (SWCNTs):1||skin compatible electronics:1||skincompatible and biocompatible electronics:1||skinlike sensor arrays:1||smart sensor:1||solgel:1||solgel metal oxides:1||solgel oxide:1||solgel processing:1||solution processes:1||solutionprocess:1||solutionprocessed amorphous oxide semiconductor (AOS):1||solutionprocessed metal oxide:1||solutionprocessed metal oxides:1||spatial atomic layer deposition (ALD):1||spatial light patterning:1||spincoating:1||stepped heating and pressure:1||strain sensor:1||stress release:1||stressdiffusion:1||superlattices:1||support vector regression:1||suppression of residual impurities/mobile ions:1||surface tailoring:1||symmetrically gated structure:1||symmetry:1||synapses:1||synaptic devices:1||tactile sensor arrays:1||tactile sensors:1||tantalum pentoxide:1||technology computeraided design:1||technology computeraided design simulations:1||textile sensor:1||thermal diffusion:1||thickness modulation:1||thin film transistor (TFT):1||thin film transistors:1||thin films:1||thinfilmtransistors (TFTs):1||threadlike fiber electronic devices:1||tin compounds:1||titanium oxide:1||transient electroluminescence (EL):1||transparent capping:1||transparent conducting electrodes:1||transparent conductive electrodes:1||ultraflexible electronics:1||ultraflexibility:1||ultraviolet irradiation:1||vertically stacked quantum dots:1||water stability:1||water treatment:1||weakly supervised learning:1||wearable devices:1||wearable electronics:1||white lightemitting diodes:1||wide band gap semiconductors:1||wireless:1||zinc compounds:1||zinc oxide:1||zinc sulphide:1||zinctinoxide:1||sensitivity:1||2D nanomaterials:1||AIGZO TFTs:1||AC stress:1||ACF:1||Al2O3:1||Aluminum oxide:1||Amorphous Oxide Semiconductor:1||Amorphous oxide semiconductor:1||Amorphous silicon thinfilm transistors (aSi:H):1||Annealing:1||Applied sciences:1||Aqueous solution:1||Ar Plasma:1||Associative learning:1||Band gap:1||Bandbending:1||BiSn Eutectic Nanoparticles:1||BiasStability:1||Bilayer:1||Bilayer channel:1||Bilayer oxide TFT:1||Bioinformatics:1||CMOs:1||Cadmium compounds:1||Capacitance:1||Capacitive pressure sensors:1||Capping Agent:1||Carbon black:1||Carbon nanotube:1||Cation doping:1||Cofuel:1||Coldcathode fluorescent lamp:1||Color Coordination:1||Complementary metaloxide semiconductors (CMOS):1||Composition ratio:1||Conducting fiber:1||Context fusion:1||Conventional thermal annealing:1||Copper Nanowire:1||Crossbar structure:1||Crosslinking:1||DUV irradiation:1||Deep UV photochemical activation:1||Deep spike structure:1||Deep spikelike:1||Deep ultraviolet:1||Deep ultraviolet (DUV) photochemical activation:1||Devicetodevice uniformity:1||Dielectric barrier discharge:1||Dielectric property:1||Direct patterning:1||Doublebarrier heterostructures:1||Dual channel conduction:1||Dualgate:1||Dualstream deep learning:1||Dynamic range:1||Electric double layer:1||Electrochromic device:1||Electronic textiles:1||Electrospinning:1||Energy band engineering:1||Energy barrier:1||Ferroelectric Liquid Crystal Displays (FLCDs):1||Fieldeffect transistor:1||Flash lamp annealing:1||Flat fluorescent lamp:1||Flexible and stretchable electronics:1||Flexible metal oxide gate dielectric:1||Fluctuations:1||

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