CAU Scholar's Space: Lee, Sang Kwon

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Lee, Sang Kwon (이상권)

자연과학대학 (물리학과)

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Tel 02-820-5455
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Thermal Conductivity:15||3omega Technique:12||4HSiC:11||Thermal conductivity:7||Thermal Transport:7||Silicon carbide:6||Nanowire:5||2D thin films:5||Callaway Model:5||Ohmic contacts:5||Sondheimer Model:5||3omega technique:5||ZnO:4||Dyesensitized solar cells:4||nanowires:4||silicon carbide:4||Piezoelectric:4||platinum diselenide:4||ICP:4||Heterojunction:4||Seebeck Coefficient:4||longitudinal spin Seebeck effect:4||thermal conductivity:4||Filopodia:4||molybdenum disulfide:3||Schottky Diodes:3||Schottky barrier height:3||Schottky contacts:3||Xray diffraction:3||BNTBT thin film:3||2D Thin Films:3||PEDOT:PSS:3||nanowire:3||Antimony:3||ohmic contacts:3||Silicon Carbide:3||phonon scattering:3||phonon transport:3||Silicon nanowires:3||dielectrophoresis:3||Graphene:3||transition metal dichalcogenide:3||Power Conversion Efficiency:3||van der Waals:3||Bismuth Antimony Telluride (Bi0.5Sb1.5Te3):3||전계효과트랜지스터:3||Ferroelectric:3||Perovskite structure:2||Cell migration:2||Silicon Nanowires:2||Schottky Junction Diode:2||Nanowire transistor:2||Field Effect Transistor:2||Phonon Transport:2||piezoelectric:2||Antimony telluride (Sb2Te3):2||Dielectrophoresis (DEP):2||CurrentVoltage Measurement:2||Circulating Tumor Cells:2||Phonon scattering:2||Longterm stability:2||Electrical Conductivity:2||MOS:2||Sacrificial oxidation:2||interfacial Seebeck effect:2||Electrical Degradation:2||Circulating tumor cells:2||SBH:2||Circulating tumor cells (CTCs):2||Platinum diselenide:2||inductively coupled plasma:2||Streptavidin Functionalization:2||Streptavidin functionalization:2||spin mixing conductance:2||spin transport:2||Composite:2||spintocharge conversion:2||FET:2||2D ATLAS simulation:2||Interfacedriven Seebeck effect:2||superlattice films:2||inplane Seebeck effect:2||Bismuth Antimony Telluride:2||image force lowering:2||Ohmic Contacts:2||3omega measurement:2||ebeam lithography:2||Callaway model:2||Heterometal:2||TLM structure:2||Au nanoparticles:2||Morphotropic:2||Tellurium:2||Schottky diodes:2||Dielectric response:2||Cell adhesion:2||Drug response:2||Seebeck coefficient:2||Interface states:2||Degradation:2||ZnO nanowires:2||Si nanowires:2||Cell capture:2||SiC:2||FigureofMerit:2||SiC Nanowire:2||Bismuth Telluride:2||Passivation:2||Antimony Telluride (Sb2Te3):2||ferromagnetic materials:2||field effect transistor:2||Films:1||Flexible:1||Focused ion beam:1||Frustration:1||GST thin films:1||GaN:1||GaN nanowires:1||GaNnanowire:1||Gallium Nitride Nanowires (GaN NWs):1||Gallium Oxide:1||Gold:1||Grain:1||Grain Size:1||Grain boundaries:1||Grain size:1||Graphene interlayer:1||HBT:1||HPAPEO composite:1||Heisenberg spin model:1||Heterojunction Solar Cell:1||High energy emissions from oxide layers:1||Homostructure:1||Hydrothermal Growth:1||IPCE:1||IVVI Materials:1||Ideality factor:1||Inplane and outofplane:1||Indoor light conditions:1||Inhomogeneous Schottky Barrier Height:1||Interference Fringes:1||Ion Implantation:1||Ionimplantation:1||Iron oxide (Fe3O4):1||JFETs:1||Junction Barrier Schottky Diodes:1||KNN:1||LTLM structures:1||Landau–Lifshitz–Gilbert equation:1||Lead free:1||LeadFree:1||LeadFree Ceramics:1||Lidoped BNTBT:1||Light Harvesting:1||Local effective piezoelectricity:1||Longterm reliability:1||MOCVD:1||Metal work function:1||Microcavity effect:1||Microparticles:1||Microvilli:1||Microwave synthesis:1||Minority Carrier Lifetime:1||Minority carrier blocking:1||Mndoped GaN nanowires:1||Modified Callaway Model:1||Modified Callaway model:1||Molybdenum Disulfide:1||Morphological evolution:1||Mott formula:1||Mott relation:1||Multicrystalline Silicon Ingot:1||Multilayer structure:1||NBTI:1||NanoSchottky Diodes:1||Nanofabrication:1||Nanoindentation:1||Nanolaminate:1||Nanoporous:1||Nanoporous structures:1||Nanoscale columnar structure:1||Nanostructures:1||Nanotube:1||Nanowire arrays:1||Nanowires (NWs):1||Nickel:1||Nickel Oxide:1||OpenCircuit Voltage:1||Optical properties:1||Organic photovoltaic devices:1||Oxide Charge:1||Oxide semiconductor:1||Oxygen incorporation:1||Oxygen plasma treatment:1||PMNPT:1||Peltier Cooler:1||Phase boundary:1||Phonon boundary scattering:1||Phonon drag:1||Phonon transport:1||PhononBoundary Scattering:1||Photo Detect:1||Piezoelectric Ceramics:1||Piezoelectric Material:1||Piezoelectricity:1||Platinum ditelluride:1||Poly (Ethylene Glycol) (PEG):1||PolyLLysine:1||Polyaniline:1||Polyethylene oxide:1||Polymethyl Methacrylate:1||Porosity:1||Post Annealing:1||PostAnnealing:1||PtSe2:1||Pulsed laser deposition:1||Pyramid:1||Quantum confinement effect:1||Quantum magnet:1||Quantum scalings:1||Quartz Nanohole Arrays:1||Quartz nanohole arrays:1||RF sputtering:1||RIE:1||Radial Growth:1||Radiation and doses:1||Radiofrequency sputtering:1||Raman spectroscopy:1||Random singlet:1||Rapid Thermal Annealing:1||RashbaEdelstein effect:1||Rb doping:1||Recombination rate:1||Redox:1||Reflectance:1||Remanent polarization:1||Resistive switching structures:1||Sb2Te3 thin films:1||Schottky barrier diode:1||Schottky barrier diodes:1||Schottky diode:1||Schottky junction diode:1||Schottkybarrierfree contact:1||Seed:1||Semiconductors:1||SiC PN Junction Diodes:1||SiO2/Si (001) substrate:1||Silicon:1||Silicon Nanowire:1||Silicon Nanowire Platform:1||Silicon nanowire:1||Silicon nanowire arrays:1||SiliconCarbide Nanopowders:1||Sintering temperature:1||SnSeSnSe2:1||SolGel Process:1||Solgel processes:1||Solar Cell:1||Solar energy materials:1||Solution Process:1||Sondheimer's model:1||Spheroidization:1||Stacking fault:1||SuperLattice:1||Superlattice:1||Superlattice Film:1||Superlattice Films:1||Superlattice films:1||Supersaturation:1||Tlymphocytes:1||TCO:1||Tapering:1||Telluride:1||Temperature dependent:1||Temperaturedependent currentvoltage:1||Thermal Resistance:1||Thermal evaporation:1||Thermal transport:1||Thermionic Emission (TE):1||Thermoelectric:1||Thermoelectric properties:1||Theromoelectric properties:1||Thin Film Transistors:1||Thin films:1||Threshold Voltage:1||TiZincTin Oxide:1||TiO2 nanoparticles:1||Timeresolved photoluminescence:1||Tin chalcogenides:1||Tin monoselenide (SnSe):1||Transient Metal Chalcogenide:1||Transition Metal Dichalcogenides:1||Transition metal dichalcogenide:1||Transition metal oxide:1||Transparent Conducting Oxide:1||Transparent Conducting Oxides:1||Trapping:1||Triangular Monolayer:1||Twin Boundary:1||TwoDimensional Layered Materials:1||TwoStep Sintering Process:1||UV/Ozone:1||Uncertainty Analysis:1||VaporLiquidSolid (VLS):1||VaporSolid (VS):1||Wet Transfer Process:1||Zinc Oxide:1||Zinc Oxide (ZnO):1||ZnO Nanorods:1||ZnO Nanosheets:1||ZnO Nanowires:1||ZnO nanowire:1||ZnO/Ag/ZnO transparent conducting electrode:1||ZnS:1||ZnSe:1||aerosol:1||alternatingcurrent dielectrophoresis:1||analyte trajectory:1||annealing:1||anomalous Nernst effect:1||band bending:1||betasilicon carbide (SiC) nanowires (NWs):1||biomedical materials:1||blood:1||broadband solar absorption:1||cAl2O3 singlecrystal substrate:1||capillary action:1||cell separation:1||cellomic analysis:1||cellular biophysics:1||ceramics:1||coating techniques:1||contact resistivity:1||contacts:1||crossplane Seebeck coefficient:1||crossplane thermoelectric properties:1||decoupling phenomenon:1||density of states:1||deposition temperature:1||die bonding:1||die shear test (DST):1||dielectrophoresis (DEP):1||driftdiffusion (DD) model:1||dry etch:1||dry etching:1||eBeam:1||electrical bipolar transport:1||electroosmotic flow:1||electrostatic screening effect:1||energy filtering:1||energy filtering effect:1||energy harvester:1||energy harvesting:1||epitaxial titanium carbide:1||etching:1||ferromagnetic insulator:1||fieldeffect transistor:1||fieldeffect transistor (FET):1||fieldeffect transistors (FET):1||fieldeffect transistors (FETs):1||figure of merit:1||gallium nitride:1||gallium nitride nanowires:1||gallium nitrides nanowires:1||gas sensor:1||gas switching:1||glassy carbon foam:1||heat current:1||heat localization:1||heterojunction pn diodes:1||heterojunction structure:1||homostructure:1||homostructure and heterostructure:1||hot carrier injection:1||hotcarrier injection:1||hydrogenation:1||interface effect:1||interfaceinduced Seebeck effect:1||interfacial thermal resistance:1||ionimplantation:1||laser scanning cytometry:1||lightemitting diodes:1||magnetic phase transition:1||magnetic proximity:1||metaloxidesemiconductor:1||mixed crystal structure:1||molecular translocation:1||molybdenum trioxide:1||monolayer tungsten diselenide:1||multilayers:1||nType Ge:1||nanoSchottky diodes:1||nanoparticles:1||nanofabrication:1||nanoparticles:1||nanorods:1||nanostructure alignment:1||nanotopography:1||nanowire rectifiers:1||neutral donor bound exciton:1||nickel compounds:1||nonequilibrium Green function formalism (NEGF):1||numerical simulation:1||outofplane Seebeck coefficient:1||outofplane thermoelectric properties:1||parallel conduction models:1||partial oxalate process:1||phonon boundary scattering:1||photoluminescence:1||piezoelectric properties:1||polymers:1||quartz nanowire array:1||rectification:1||resistive switching memory:1||sensors:1||shock absorber:1||silicon:1||silicon nanowire:1||simulation:1||single layer graphene:1||solar steam generation:1||solder:1||solidstate nanopore:1||spin accumulation:1||spin current:1||spinmixing conductance:1||stacking faults:1||strain:1||streptavidin:1||surface magnetic anisotropy:1||surface passivation:1||thermoelectric generation:1||transmission electron microscopy:1||transverse Seebeck coefficients:1||trenching effect:1||tumours:1||tungsten diselenide:1||twodimensional layered materials:1||twodimensional transitionmetal dichalcogenide:1||ultraviolet lightemitting diodes (UVLEDs):1||van der Waals contacts:1||work function:1||{산화아연 나노선:1||가지구조:1||나노선 트랜지스터:1||나노와이어:1||시뮬레이션:1||실리콘 나노선:1||씨앗:1||오믹 접촉:1||유전전기영동:1||이온주입:1||질화갈륨 나노선:1||탄화규소 나노선:1||(Bi, Sc)O3(Pb, Ti)O3:1||화학기상증착법:1||2D materials:1||2D heterostructure:1||2D homostructure:1||3 omega Method:1||3 omega Technique:1||3 omega technique:1||3Omega Method:1||3Omega method:1||3CSiC:1||3CSiC nanowire:1||4HSiC MOSFET:1||4Hsilicon carbide:1||A Gaussian Distribution of the Barrier Height:1||AFM:1||AZO:1||Acetate seeding:1||Activation annealing:1||Aerosol Deposition:1||Ag2O:1||Al and In Dopants:1||AlDoped ZnO Film:1||Aldoped ZnO:1||Aldoped zinc oxide (ZnO):1||Aluminium Carbide:1||Aluminium dopedZnO(AZO):1||Anisotropic Thermal Conductivity:1||Anisotropy:1||Annealing Effects:1||Annealing effect:1||Annealing temperature:1||Antireflection Coating:1||Atomic force microscopy (AFM):1||Atomic layer deposition (ALD):1||Au Catalyst:1||BA:1||BNT:1||Barrier inhomogeneity:1||Based Solar Cell:1||Bilayer Thin Films 3omega Technique Grain Size:1||Biocompatibility:1||Biomedical sensors:1||Bismuth:1||Bismuth (Bi):1||Bismuth Telluride (Bi2Te3):1||Branchedstructure:1||Breast Cancer:1||Breast cancer patient:1||Breast cancer patient blood:1||Brownian motion:1||CD4 T cell:1||CD4 Tlymphocytes:1||CD4(+) T lymphocyte:1||CMP:1||CNTs:1||CO2 Laser Annealing:1||CO2 laser annealing:1||CapacitanceVoltage Measurement:1||Capture Sensitivity:1||Carbon nanotubes:1||Carrier screening effect:1||Cell Capture and Separation:1||Cell capture efficiency:1||Cell traction force:1||Ceramics:1||Chemical Vapor Deposition:1||Chemical synthesis:1||Chemical vapor deposition (CVD):1||Coherent phonon transport:1||Conducting filament:1||Contact Guidance:1||Contact guidance:1||Conversion Efficiency:1||Coulombic repulsion:1||Crossplane thermal conductivity:1||Cu2ZnSnS4:1||Deep Level Transient Spectroscopy:1||DeepUV:1||Dieattaching:1||Diebonding:1||Dielectric properties:1||Dielectrophoresis:1||Directional Solidification:1||DualChannel:1||Dye Sensitized Solar Cells:1||DyeSensitized Solar Cells:1||DyeSensitized Solar Cells (DSSCs):1||EBL:1||Effective mass:1||Electrical Properties:1||Electrical conductivity:1||Electrical degradation:1||Electrical properties:1||Electromechanical Coupling Coefficient:1||Electron Transport:1||Electron microscopy:1||Electronic thermal conductivity:1||Electronic transport:1||Energy Generator:1||Energy Harvesters:1||Energy filtering:1||Faceting:1||Fe3O4 thin films:1||Fermilevel depinning:1||Fermilevel pinning:1||Ferroelectrics:1||FieldEffect Mobility:1||FieldEffect Transistor (FET):1||Fieldeffect Transistor:1||Fieldeffect transistor:1||Fieldeffect transistors:1||

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