CAU Scholar's Space: Koh, Jung Hyuk

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Koh, Jung Hyuk (고중혁)

대학원 (지능형에너지산업융합학과)

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Tel 02-820-5311
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Piezoelectric:15||Piezoelectric properties:10||Energy harvesting:9||PZT:7||Sintering temperature:6||Dielectric properties:5||piezoelectric:5||Aerosol Deposition:4||Leadfree piezoelectric:4||Energy harvester:4||TCO:4||BNT:4||BST:4||Leadfree ceramics:3||CO2 laser annealing:3||ZnO:3||BNTBT:3||CaCu3Ti4O12:3||Transparent Conducting Oxide:3||Energy Harvesting:3||Perovskite:3||BSPT:3||Lead free:3||Sintering Temperature:3||piezoelectric properties:3||Energy Harvesters:3||Ceramics:3||Electrical properties:3||Leadfree:3||Thermal conductivity:2||Thin films:2||High Power LED:2||Light Grid System:2||thinfilm transistor:2||RTA:2||Rapid Thermal Annealing:2||(1x)(Bi,Na)TiO3x(Bi,K)TiO3 ceramics:2||PMNPZT:2||Recycling Energy:2||Relative shrinkage:2||2D thin films:2||3omega technique:2||Xray diffraction:2||BSPT Ceramics:2||AZO:2||ZnO TCO:2||Impedance spectroscopy:2||BMTPT:2||ceramics:2||Energy Harvester:2||Sintering:2||energy harvesting:2||Infrared Laser:2||SolGel:2||leadfree:2||Piezoelectric Ceramics:2||NIR:2||Aldoped ZnO:2||Piezoelectric ceramics:2||Etching:2||Piezoelectric energy harvesters:2||BaTiO3:2||piezoelectric materials:2||Graphene:2||CO2 Laser Annealing:2||Electrical degradation:1||Electromechanical Coupling Coefficient:1||Electronic thermal conductivity:1||Eneryg harvesting:1||FOM:1||Femtosecond laser:1||Ferroelectric:1||Ferroelectricity:1||Ferroelectrics:1||FieldEffect Mobility:1||Fieldeffect transistors:1||Figure of Merit:1||Films:1||Flammable:1||Flammable Material:1||Flexible:1||Flexible Substrate:1||Flexible Substrates:1||Flexible piezoelectric energy harvester:1||Flexible substrate:1||FoM:1||GaDoped ZnO:1||Gadoped ZnO:1||GaN:1||Gallium Oxide:1||Genetic Algorithm:1||Graded structure:1||Grain Size:1||Grain size:1||Hard piezoelectric properties:1||Heat Radiation:1||Heterojunction:1||HighPower LED:1||Highconcentration Ga incorporation:1||Hybrid composite film:1||IGZO thinfilm:1||IR Laser:1||IVVI Materials:1||IZO:1||IZO ThinFilm Transistors:1||Ideality factor:1||Impedance Matching:1||Impedance matching:1||In and Ga codoped ZnO:1||In and Ga dopants:1||InDoped ZnO:1||InAldoped ZnO:1||Indium zinc oxide:1||KNN:1||LED:1||Laser Ablation:1||Laser Direct Patterning:1||Laser annealing:1||LeadFree:1||LeadFree Ceramics:1||LeadFree Piezoelectric:1||LeadFree Piezoelectric Ceramic:1||Leadfree piezoelectric ceramics:1||Li:1||Low sintering temperature:1||MIM structure:1||MSMS:1||Magnetic Polymer Composite Thick Film:1||Magnetic Shielding Sheet:1||Mechanism:1||Metal work function:1||Micro pillar structure:1||MicroEnergy:1||Microwave Annealing:1||Milling:1||MnO2doped PZT:1||Modified Callaway model:1||Morphotropic:1||Multilayer:1||Multistacked:1||Multilayer structure:1||Multilayered Piezoelectric Energy Harvesters:1||Multilayered structure:1||NKN:1||NKN ceramics with excess K/Na dopants:1||NKNBNT:1||NKNLN:1||NKNLS:1||Nanoparticle:1||Near Field Communication:1||NiZnCu ferrite:1||Nitrogendoped reduced graphene oxide:1||Ohmic Contacts:1||Optical properties:1||Optimal Combination Model:1||Organic Solar Cells:1||Oxygen plasma · Multistacked IZO TFT · Solution process · RF plasma power:1||PEDOT:PSS:1||PET Substrate:1||PMNPT:1||PZTPZNN:1||Passive Damping:1||Pb(Zr,Ti)O3Pb(Zn,Ni,Nb)O3Pb(ln,Nb)O3:1||Pc (Phthalocyanine):1||Pc (phthalocyanine):1||Pc(phthalocyanine):1||Pcs (phthalocyanines):1||Pcs Phthalocyanines):1||Pcs(phthalocyanines):1||Performance evaluation:1||Perovskite structure:1||Perovskites:1||Perovsldtes:1||Photo Detect:1||Piezoelectric Energy Harvesters:1||Piezoelectric Material:1||Piezoelectric Properties:1||Piezoelectric Shock Absorber:1||Piezoelectric energy harvester:1||Piezoelectric material:1||Piezoelectric mobile communication:1||Piezoelectricity:1||Plastics:1||Polyvinylidene fluoride:1||Postannealing process:1||Powders: Solid state reaction:1||Power Conversion Efficiency:1||Pulsed fiber lasers:1||Pyroelectric:1||RL Shunt Damping:1||RFmagnetron sputtering:1||Radiofrequency magnetron sputtering:1||Rapid thermal annealing process:1||Rb doping:1||Recycled Energy:1||Relative dielectric permittivity:1||Renewable energy:1||Resistivity:1||Rfsputtering:1||Rietveld refinement:1||Rosentype:1||SEM:1||Schottky Junction Diode:1||Schottky barrier height:1||Schottky diode:1||Schottky junction diode:1||Semiconductor device measurement:1||Shock Absorber:1||SiO2:1||Silicon Carbide:1||Soft piezoelectric:1||Solgel:1||Solgel processes:1||SolutionProcessed:1||Solutionprocessed:1||Sondheimer's model:1||Spin Coating:1||Spin coater:1||Stability analysis:1||Statistical distributions:1||Stress free:1||Supercapacitor:1||TGG:1||Thermal Conductivity:1||Thermal Energy:1||Thermal Energy Loss:1||Thermal Transport:1||ThermoElectric Devices:1||Thin film transistors:1||Tin chalcogenides:1||Tin monoselenide (SnSe):1||Tolerance factor:1||Transduction coefficient:1||Transient Metal Chalcogenide:1||Transmittance:1||Transparent Conducting Oxides:1||Transparent conducting oxide:1||Transparent conducting oxides:1||Transparent conductive composite oxide:1||Transparent conductive oxide:1||TwoStep Sintering Process:1||Twostep optical annealing:1||Twostep sintering:1||Wide bandgap material:1||Wide energy band gap materials:1||Ytterbium:1||Zinc Oxide:1||aIGZO:1||activation energy:1||aerosol deposition:1||carbon nanotube:1||ceramic:1||composite:1||crystallization:1||dielectric constant.:1||dielectric response:1||electrical properties:1||energy harvester:1||impedance matching:1||indium zinc oxide thinfilms:1||lattice mismatch:1||memristors:1||metalinsulating oxidemetals:1||morphology:1||multilayers:1||nearfield communication:1||oxide:1||oxides semiconductor:1||oxygen plasma:1||partial oxalate process:1||passivation:1||piezoelectric ceramics:1||piezoelectric material:1||piezoelectric transformers:1||polymer composite:1||polymers:1||polyvinylidene fluoride:1||resistive randomaccess memory:1||shock absorber:1||shrinkage mechanism:1||singlewalled carbon nanotube:1||sintering mechanism:1||softdoped Sb2O3:1||sonication:1||stepup amplification ratio:1||thin films:1||transistor:1||twostep sintering process:1||zincphthalocyanine:1||βGa2O3:1||(1x)BZTxBCT:1||(1x)Ba(Zr0.2Ti0.8)O3–x(Ba0.7Ca0.3)TiO3:1||(Bi, Sc)O3(Pb, Ti)O3:1||(Bi,Na) TiO3(Bi,K) TiO3:1||(Bi,Sc)O3(Pb,Ti)O3 ceramics:1||(In, Ga) codoped ZnO:1||(Na0.5K0.5)NbO3(Bi0.5Na0.5)TiO3:1||0.5Ba(Zr0.2Ti0.8)O3−0.5(Ba0.7Ca0.3)TiO3:1||0.97(Na0.5K0.5)NbO30.03(Bi0.5Na0.5)TiO3:1||2D materials:1||3D Electromagnetic Simulation:1||3Dimensional Direct Patterning:1||3omega Technique:1||AC Conductivity:1||AC conductivity:1||Activation energy:1||Actuator:1||Actuators:1||Aerosol deposition:1||Ag Paste:1||Ag2O:1||Aging behavior:1||Al and In Dopants:1||Al doped ZnO:1||AlDoped ZnO:1||Aldoped zinc oxide (ZnO):1||Annealing:1||Annealing Effects:1||Annealing effect:1||Antimony Telluride (Sb2Te3):1||Antimony telluride (Sb2Te3):1||B. Grain size:1||BA:1||BCZT:1||BMZPT:1||BNT–BST:1||BNTBT thin film:1||BNZPT:1||BSPT ceramics with Bi excess:1||BSTBCT:1||BTbased:1||BandPass Filter:1||CO2 laser:1||Calcination:1||Capacitors:1||Carrier screening effect:1||Ceramic Actuators:1||Ceramic actuators:1||Ceramic/polymer composite film:1||Codoped:1||Crystallization:1||CuO:1||CuOBZT:1||Curie temperature:1||CurrentVoltage Measurement:1||DeepUV:1||Degradation:1||Dielectric Properties:1||Dielectricity:1||Electric variables:1||Electrical Conductivity:1||Electrical Degradation:1||Electrical Properties:1||Electrical conductivity:1||

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