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SCIESCOPUS
Degradation of nitride/W/WNx/poly-Si gate stack by post-thermal processesGo to Link

Cho, Heung Jae; Jang, Se-Aug; Kim, Yong Soo; Lim, Kwan-Yong; Oh, Jae-Geun.; Lee, Jung-Ho; Park, Tae-Su; Back, Tae-Sun; Yang, Jun-Mo; Yang, Hong-Seon, et al.

ArticleIssue Date2005CitationJapanese Journal of Applied Physics, v.44, no.4 B, pp 2221 - 2224PublisherIOP Publishing Ltd
SCOPUS
Effect of gate hard mask and sidewall spacer structures on the gate oxide reliability of W/WNx/poly-Si gate MOSFET for high density DRAM applicationsGo to Link

Lim, Kwan Yong; Cho, Heung Jae; Jang, Se Aug; Kim, Yong Soo; Oh, Jae Geun; Lee, Jung Ho; Yang, Hong Seon; Sohn, Hyun Chul.; Kim, Jin Woong

ArticleIssue Date2005CitationJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, v.23, no.3, pp 1036 - 1040PublisherAmerican Institute of Physics
SCIESCOPUS
Effect of selective oxidation conditions on defect generation in gate oxideGo to Link

Cho, Heung Jae; Lim, Kwan Yong; Jang, Se aug; Lee, Jung ho; Oh, Jae geun; Kim, Yong soo; Yang, Hong seon; Sohn, Hyun chul

ArticleIssue Date2004CitationJapanese Journal of Applied Physics, v.43, no.4B, pp 1825 - 1828PublisherIOP Publishing Ltd
SCIESCOPUS
Impact of in situ NH3 preannealing on sub-100 nm tungsten polymetal gate electrode during the sealing nitride formationGo to Link

Lim, Kwan Yong; Lee, Jung ho; Cho, Heung Jae; Oh, Jae geun; Hong, Byung seop; Jang, Se aug; Kim, Yong soo; Yang, Hong seon; Sohn, Hyun chul

ArticleIssue Date2004CitationJapanese Journal of Applied Physics, v.43, no.4B, pp 1829 - 1832PublisherIOP Publishing Ltd
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