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Showing results 1 to 8 of 8

SCISCIESCOPUS
Active Precharge Hammering to Monitor Displacement Damage Using High-Energy Protons in 3x-nm SDRAMGo to Link

Lim, Chulseung; Park, Kyungbae; Baeg, Sanghyeon

ArticleIssue Date2017CitationIEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.64, no.2, pp 859 - 866PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCOPUS
Active-precharge hammering on a row induced failure in DDR3 SDRAMs under 3× nm technologyGo to Link

Park, Kyungbae; Baeg, Sanghyeon; Wen, Shijie; Wong, Richard

ArticleIssue Date2015CitationIEEE International Integrated Reliability Workshop Final Report, v.2015, pp 82 - 85PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Architectural design tradeoffs in SRAM-based TCAMsGo to Link

Ahmed, Ali; Park, Kyungbae; Khan, Saqib Ali; Maroof, Naeem; Baeg, Sanghyeon

ArticleIssue Date2019CitationIEICE ELECTRONICS EXPRESS, v.16, no.13, pp 1 - 3PublisherIEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
SCISCIESCOPUS
Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3 x nm technologyGo to Link

Park, Kyungbae; Lim, Chulseung; Yun, Donghyuk; Baeg, Sanghyeon

ArticleIssue Date2016CitationMICROELECTRONICS RELIABILITY, v.57, pp 39 - 46PublisherPERGAMON-ELSEVIER SCIENCE LTD
SCOPUS
Logic soft error study with 800-MHz DDR3 SDRAMs in 3x nm using proton and neutron beamsGo to Link

Bak, Geunyong; Lee, Soonyoung; Lee, Hosung; Park, Kyungbae; Baeg, Sanghyeon; Wen, Shijie; Wong, Richard; Slayman, Charlie

ArticleIssue Date2015CitationIEEE International Reliability Physics Symposium Proceedings, v.2015, pp SE31 - SE35PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Resource-Efficient SRAM-Based Ternary Content Addressable MemoryGo to Link

Ahmed, Ali; Park, Kyungbae; Baeg, Sanghyeon

ArticleIssue Date2017CitationIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, v.25, no.4, pp 1583 - 1587PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCISCIESCOPUS
Statistical distributions of row-hammering induced failures in DDR3 componentsGo to Link

Park, Kyungbae; Yun, Donghyuk; Baeg, Sanghyeon

ArticleIssue Date2016CitationMICROELECTRONICS RELIABILITY, v.67, pp 143 - 149PublisherPERGAMON-ELSEVIER SCIENCE LTD
SCISCIESCOPUS
Study of proton radiation effect to row hammer fault in DDR4 SDRAMsGo to Link

Lim, Chulseung; Park, Kyungbae; Bak, Geunyong; Yun, Donghyuk; Park, Myungsang; Baeg, Sanghyeon; Wen, Shi-Jie; Wong, Richard

ArticleIssue Date2018CitationMICROELECTRONICS RELIABILITY, v.80, pp 85 - 90PublisherPERGAMON-ELSEVIER SCIENCE LTD
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