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Comparison of Top-Gate and Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With the Same SiO2/a-InGaZnO/SiO2 StackGo to Link

Oh, Saeroonter; Baeck, Ju Heyuck; Shin, Hyun Soo; Bae, Jong Uk; Park, Kwon-Shik; Kang, In Byeong

ArticleIssue Date2014CitationIEEE ELECTRON DEVICE LETTERS, v.35, no.10, pp.1037 - 1039PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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