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Effect of gate hard mask and sidewall spacer structures on the gate oxide reliability of W/WNx/poly-Si gate MOSFET for high density DRAM applications Go to Link

Lim, Kwan Yong; Cho, Heung Jae; Jang, Se Aug; Kim, Yong Soo; Oh, Jae Geun; Lee, Jung Ho; Yang, Hong Seon; Sohn, Hyun Chul.; Kim, Jin Woong

ArticleIssue Date2005CitationJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, v.23, no.3, pp 1036 - 1040PublisherAmerican Institute of Physics

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