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Simulation of a Recessed Channel Ferroelectric-Gate Field-Effect Transistor with a Dual Ferroelectric Gate Stack for Memory ApplicationGo to Link

Chen, Simin; Ahn, Dae-Hwan; Ui An, Seong; Kim, Younghyun

ArticleIssue Date2023Citation7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023, pp 1 - 3PublisherInstitute of Electrical and Electronics Engineers Inc.
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