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InGaAs 계 HEMT 및 RTD 에피성장 기술 개발

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dc.contributor.author오재응-
dc.date.accessioned2021-07-07T09:07:51Z-
dc.date.available2021-07-07T09:07:51Z-
dc.date.issued2003-08-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/105040-
dc.format.extent45-
dc.publisher테라급 나노소자 개발사업-
dc.titleInGaAs 계 HEMT 및 RTD 에피성장 기술 개발-
dc.typeBook-
dc.contributor.affiliatedAuthor오재응-
dc.type.rimsBOOK-
dc.description.isChapterFALSE-
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COLLEGE OF ENGINEERING SCIENCES > SCHOOL OF ELECTRICAL ENGINEERING > 3. Books & Book Chapters

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