Elastomeric Nanodielectrics for Soft and Hysteresis-Free Electronics

Abstract

Elastomeric dielectrics are crucial for reliably governing the carrier densities in semiconducting channels during deformation in soft/stretchable field-effect transistors (FETs). Uncontrolled stacking of polymeric chains renders elastomeric dielectrics poorly insulated at nanoscale thicknesses, thereby thick films are usually required, leading to high voltage or power consumption for on/off operations of FETs. Here, layer-by-layer assembly is exploited to build 15-nm-thick elastomeric nanodielectrics through alternative adsorption of oppositely charged polyurethanes (PUs) for soft and hysteresis-free FETs. After mild thermal annealing to heal pinholes, such PU multilayers offer high areal capacitances of 237 nF cm(-2) and low leakage current densities of 3.2 x 10(-8) A cm(-2) at 2 V. Owing to the intrinsic ductility of the elastomeric PUs, the nanofilms possess excellent dielectric properties at a strain of 5% or a bending radius of 1.5 mm, while the wrinkled counterparts show mechanical stability with negligible changes of leakage currents after repeated stretching to a strain of 50%. Besides, these nanodielectrics are immune to high humidity and conserve their properties when immersed into water, despite their assembly occurs aqueously. Furthermore, the PU dielectrics are implemented in carbon nanotube FETs, demonstrating low-voltage operations (< 1.5 V) and negligible hysteresis without any encapsulations.