Surface-modified quantum-dot floating layer using novel thiol with large dipole moment for improved feasibility of light-erasable organic transistor memory applications
DC Field | Value | Language |
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dc.contributor.author | Kim, Cheulhwan | - |
dc.contributor.author | Kim, Jae Young | - |
dc.contributor.author | Lee, Kanghuck | - |
dc.contributor.author | Jung, Sun Young | - |
dc.contributor.author | Yun, Dong-Jin | - |
dc.contributor.author | An, Tae Kyu | - |
dc.contributor.author | Lee, Hwa Sung | - |
dc.contributor.author | Jeong, Yong Jin | - |
dc.contributor.author | Lee, Jihoon | - |
dc.date.accessioned | 2021-06-22T09:04:19Z | - |
dc.date.available | 2021-06-22T09:04:19Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2020-05 | - |
dc.identifier.issn | 1226-086X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/1092 | - |
dc.description.abstract | In this study, a new functional thiol with a pentafluorophenyl group was synthesized for the surface modification of CdSe quantum-dot floating layers; this was aimed at the fabrication of organic field-effect transistors (OFETs). The dipole moments and surface properties of the fluorinated thiols were used to control the transistor operations; these thiols acted as surface modifiers of the CdSe quantum-dot floating layers in the OFETs. Further, the new functional thiol exhibited a larger dipole moment than that of the commercial 2,3,4,5,6-pentafluorothiophenol. The OFET comprising the new functional thiol with the pentafluorophenyl group functioned as a normally ON transistor and exhibited bistable current states during nondestructive reading. In addition, it exhibited sensitive responses to electrical-only and lightonly biases, which demonstrates its feasibility for light-responsive flash memory applications. (C) 2020 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | 한국공업화학회 | - |
dc.title | Surface-modified quantum-dot floating layer using novel thiol with large dipole moment for improved feasibility of light-erasable organic transistor memory applications | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Hwa Sung | - |
dc.identifier.doi | 10.1016/j.jiec.2020.01.031 | - |
dc.identifier.scopusid | 2-s2.0-85079067492 | - |
dc.identifier.wosid | 000523605700009 | - |
dc.identifier.bibliographicCitation | Journal of Industrial and Engineering Chemistry, v.85, pp.111 - 117 | - |
dc.relation.isPartOf | Journal of Industrial and Engineering Chemistry | - |
dc.citation.title | Journal of Industrial and Engineering Chemistry | - |
dc.citation.volume | 85 | - |
dc.citation.startPage | 111 | - |
dc.citation.endPage | 117 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Engineering, Chemical | - |
dc.subject.keywordPlus | STORAGE | - |
dc.subject.keywordPlus | MONOLAYERS | - |
dc.subject.keywordAuthor | Optical transistor memory | - |
dc.subject.keywordAuthor | CdSe | - |
dc.subject.keywordAuthor | Quantum dots | - |
dc.subject.keywordAuthor | Fluorinated thiol | - |
dc.subject.keywordAuthor | Dipole moment | - |
dc.subject.keywordAuthor | Photo-induced recovery | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S1226086X20300514?via%3Dihub | - |
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