Analytical Model of the Vertical Pinned Photodiode
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jiwon | - |
dc.contributor.author | van Sieleghem, Edward | - |
dc.contributor.author | Kim, Hyunwoo | - |
dc.contributor.author | Genoe, Jan | - |
dc.date.accessioned | 2023-02-21T05:38:37Z | - |
dc.date.available | 2023-02-21T05:38:37Z | - |
dc.date.issued | 2022-10 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.issn | 1557-9646 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/111532 | - |
dc.description.abstract | This article presents a simple analytical model of the vertical pinned photodiode (PPD). In the existing pixels with relatively large sizes, the photodiode is formed by p(+)-n-p doping in a planar manner, and thus the vertical electric field determines the potential of the photodiode. However, as the pixel size becomes smaller, the size of the photodiode also decreases. Accordingly, the influence of the doping concentration in the periphery becomes larger and the pinning voltage is eventually predominantly determined by the horizontal electric field in the submicrometer region. In this case, the analytical model describing the conventional photodiode structure is no longer applicable. Therefore, in this article, a simple analytical model applicable to a small pixel size is provided and verified through TCAD simulation. It is thought that the proposed simple model helps understand the potential of small pixel size and provides a major starting point for design. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | Analytical Model of the Vertical Pinned Photodiode | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1109/TED.2022.3198026 | - |
dc.identifier.scopusid | 2-s2.0-85136678309 | - |
dc.identifier.wosid | 000846389800001 | - |
dc.identifier.bibliographicCitation | IEEE Transactions on Electron Devices, v.69, no.10, pp 5603 - 5606 | - |
dc.citation.title | IEEE Transactions on Electron Devices | - |
dc.citation.volume | 69 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 5603 | - |
dc.citation.endPage | 5606 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | Active pixel sensors | - |
dc.subject.keywordAuthor | CMOS image sensors (CISs) | - |
dc.subject.keywordAuthor | image sensors | - |
dc.subject.keywordAuthor | photodiodes | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/9862945 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.