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Interpretation of Channel Width-Dependent Shift in Device Characteristics of Oxide Semiconductor Thin-Film Transistors

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dc.contributor.author오새룬터-
dc.date.accessioned2023-04-03T14:06:42Z-
dc.date.available2023-04-03T14:06:42Z-
dc.date.issued20220824-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/111925-
dc.titleInterpretation of Channel Width-Dependent Shift in Device Characteristics of Oxide Semiconductor Thin-Film Transistors-
dc.typeConference-
dc.citation.conferenceNameThe 22nd International Meeting on Information Display-
dc.citation.conferencePlaceBEXCO, Busan, Korea-
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COLLEGE OF ENGINEERING SCIENCES > SCHOOL OF ELECTRICAL ENGINEERING > 2. Conference Papers

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