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Flexible artificial Si-In-Zn-O/ion gel synapse and its application to sensory-neuromorphic system for sign language translation

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dc.contributor.authorOh Seyong-
dc.contributor.authorCho Jeong-Ick-
dc.contributor.authorLee Byeong Hyeon-
dc.contributor.authorSeo Seunghwan-
dc.contributor.authorLee Ju-Hee-
dc.contributor.authorChoo Hyongsuk-
dc.contributor.authorHeo Keun-
dc.contributor.authorLee Sang Yeol-
dc.contributor.authorPark Jin-Hong-
dc.date.accessioned2023-07-05T05:30:13Z-
dc.date.available2023-07-05T05:30:13Z-
dc.date.issued2021-10-
dc.identifier.issn2375-2548-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/112834-
dc.description.abstractWe propose a flexible artificial synapse based on a silicon-indium-zinc-oxide (SIZO)/ion gel hybrid structure directly fabricated on a polyimide substrate, where the channel conductance is effectively modulated via ion movement in the ion gel. This synaptic operation is possible because of the low-temperature deposition process of the SIZO layer (<150 degrees C) and the surface roughness improvement of the poly(4-vinylphenol) buffer layer (12.29 -> 1.81 nm). The flexible synaptic device exhibits extremely stable synaptic performance under high mechanical (bending 1500 times with a radius of 5 mm) and electrical stress (application of voltage pulses 10(4) times) without any degradation. Last, a sensory-neuromorphic system for sign language translation, which consists of stretchable resistive sensors and flexible artificial synapses, is designed and successfully evaluated via training and recognition simulation using hand sign patterns obtained by stretchable sensors (maximum recognition rate, 99.4%).-
dc.format.extent10-
dc.language영어-
dc.language.isoENG-
dc.publisherAmerican Association for the Advancement of Science-
dc.titleFlexible artificial Si-In-Zn-O/ion gel synapse and its application to sensory-neuromorphic system for sign language translation-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1126/sciadv.abg9450-
dc.identifier.scopusid2-s2.0-85119006407-
dc.identifier.wosid000760639300004-
dc.identifier.bibliographicCitationScience Advances, v.7, no.44, pp 1 - 10-
dc.citation.titleScience Advances-
dc.citation.volume7-
dc.citation.number44-
dc.citation.startPage1-
dc.citation.endPage10-
dc.description.isOpenAccessY-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalWebOfScienceCategoryMultidisciplinary Sciences-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.identifier.urlhttps://www.science.org/doi/10.1126/sciadv.abg9450-
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ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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