A Backside-Illuminated Charge-Focusing Silicon SPAD With Enhanced Near-Infrared Sensitivity
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Van Sieleghem, Edward | - |
dc.contributor.author | Karve, Gauri | - |
dc.contributor.author | De Munck, Koen | - |
dc.contributor.author | Vinci, Andrea | - |
dc.contributor.author | Cavaco, Celso | - |
dc.contributor.author | Suss, Andreas | - |
dc.contributor.author | Van Hoof, Chris a | - |
dc.contributor.author | Lee, Jiwon | - |
dc.date.accessioned | 2023-07-05T05:31:26Z | - |
dc.date.available | 2023-07-05T05:31:26Z | - |
dc.date.issued | 2022-03 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.issn | 1557-9646 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/112875 | - |
dc.description.abstract | A backside-illuminated (BSI) near-infrared (NIR)-enhanced silicon single-photon avalanche diode (SPAD) for time-of-flight (ToF) light detection and ranging applications is presented. The detector contains a 2- boldsymbol μm -wide multiplication region with a spherically uniform electric field peak enforced by field-line crowding. A charge-focusing electric field extends into a 10- boldsymbol μm -deep absorption volume, whereby electrons generated in all the corners of the device can move efficiently toward the multiplication region. The SPAD is integrated with a customized 130-nm CMOS technology and a dedicated BSI process. The device has a pitch of 15 boldsymbol μm, which has the potential to be scaled down without significant performance loss. Furthermore, the detector achieves a photon detection efficiency (PDE) of 27% at 905 nm, with an excess bias of 3.5 V that is controlled by integrated CMOS electronics, and a timing resolution of 240 ps. By virtue of these features, the device architecture is well-suited for large-format ToF imaging arrays with integrated electronics. © 1963-2012 IEEE. | - |
dc.format.extent | 8 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | A Backside-Illuminated Charge-Focusing Silicon SPAD With Enhanced Near-Infrared Sensitivity | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1109/TED.2022.3143487 | - |
dc.identifier.scopusid | 2-s2.0-85124067306 | - |
dc.identifier.wosid | 000751497000001 | - |
dc.identifier.bibliographicCitation | IEEE Transactions on Electron Devices, v.69, no.3, pp 1129 - 1136 | - |
dc.citation.title | IEEE Transactions on Electron Devices | - |
dc.citation.volume | 69 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1129 | - |
dc.citation.endPage | 1136 | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | PHOTON AVALANCHE-DIODE | - |
dc.subject.keywordAuthor | Backside illumination (BSI) | - |
dc.subject.keywordAuthor | charge focusing | - |
dc.subject.keywordAuthor | CMOS integrated circuits | - |
dc.subject.keywordAuthor | infrared imaging | - |
dc.subject.keywordAuthor | single-photon avalanche diode (SPAD) | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/9696190?arnumber=9696190&SID=EBSCO:edseee | - |
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