Heterogeneous 3D Sequential CFET with Ge (110) Nanosheet p-FET on Si (100) bulk n-FET by Direct Wafer Bonding
DC Field | Value | Language |
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dc.contributor.author | Kim, Seong Kwang | - |
dc.contributor.author | Lim, Hyeong-Rak | - |
dc.contributor.author | Jeong, Jaejoong | - |
dc.contributor.author | Lee, Seung Woo | - |
dc.contributor.author | Kim, Joon Pyo | - |
dc.contributor.author | Jeong, Jaeyoung | - |
dc.contributor.author | Kim, Bong Ho | - |
dc.contributor.author | Ahn, Seung-Yeop | - |
dc.contributor.author | Park, Youngkeun | - |
dc.contributor.author | Geum, Dae-Myoung | - |
dc.contributor.author | Kim, Younghyun | - |
dc.contributor.author | Baek, Yongku | - |
dc.contributor.author | Cho, Byung Jin | - |
dc.contributor.author | Kim, Sang Hyeon | - |
dc.date.accessioned | 2023-07-05T05:43:33Z | - |
dc.date.available | 2023-07-05T05:43:33Z | - |
dc.date.issued | 2022-12 | - |
dc.identifier.issn | 2380-9248 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/113251 | - |
dc.description.abstract | In this work, we demonstrated 3D sequential complementary field-effect-transistor (CFET) by direct wafer bonding (DWB) technique and a low-temperature process for monolithic 3D (M3D) integration using a high-performance top Ge (110)/<110> channel on bottom Si CMOS. Here, the maximum thermal budget was up to 400 degrees C during the fabrication of top Ge FET, allowing high-performance heterogenous Ge/Si CFET without damage to bottom Si FETs. Furthermore, we systematically investigated the mobility enhancement to channel orientation in thin Ge (110) nanosheet channel pFET. Low effective hole mass along <110> direction on Ge (110), which was calculated by the k center dot p method, provided record high mobility of approximately 400 cm(2)/V center dot s (corresponds to 743 cm(2)/V center dot s when normalized by footprint) among the reported Ge pFET with similar channel thicknesses at room temperature. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IEEE | - |
dc.title | Heterogeneous 3D Sequential CFET with Ge (110) Nanosheet p-FET on Si (100) bulk n-FET by Direct Wafer Bonding | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1109/IEDM45625.2022.10019551 | - |
dc.identifier.scopusid | 2-s2.0-85147525361 | - |
dc.identifier.wosid | 000968800700207 | - |
dc.identifier.bibliographicCitation | Technical Digest - International Electron Devices Meeting, IEDM, v.2022-December, pp 2011 - 2014 | - |
dc.citation.title | Technical Digest - International Electron Devices Meeting, IEDM | - |
dc.citation.volume | 2022-December | - |
dc.citation.startPage | 2011 | - |
dc.citation.endPage | 2014 | - |
dc.type.docType | Proceedings Paper | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/10019551?arnumber=10019551&SID=EBSCO:edseee | - |
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