A new decoder-type integrated gate driver with a-Si:H TFTs for active-matrix displays
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jong Seok | - |
dc.contributor.author | Choi, Byong-Deok | - |
dc.date.accessioned | 2023-07-05T05:56:52Z | - |
dc.date.available | 2023-07-05T05:56:52Z | - |
dc.date.issued | 2014-03 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.issn | 1347-4065 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/113340 | - |
dc.description.abstract | In this paper, we propose a new integrated hydrogenated amorphous silicon (a-Si: H) thin-film transistor (TFT) gate driver circuit based on a decoder with parallel TFTs. All a-Si: H TFTs in the proposed gate driver have duty ratios of 50% or less to suppress the threshold voltage (V-TH) shift, but at the same time, the output can avoid a high-impedance state to resist against noises. The proposed gate driver also removes dead time, and reduces the circuit area and the number of TFTs compared with the previously reported decoder-type and demultiplexer-type integrated gate drivers. The simulation results show that the rising time and falling time are 2.47 and 2.43 mu s, respectively, with a -5 to 30V output voltage swing, which are suitable for full high-definition (full-HD) format active-matrix displays at a 120Hz frame frequency. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IOP Publishing Ltd | - |
dc.title | A new decoder-type integrated gate driver with a-Si:H TFTs for active-matrix displays | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.7567/JJAP.53.03CD03 | - |
dc.identifier.scopusid | 2-s2.0-84903270363 | - |
dc.identifier.wosid | 000337055000013 | - |
dc.identifier.bibliographicCitation | Japanese Journal of Applied Physics, v.53, no.3spec.1, pp 1 - 4 | - |
dc.citation.title | Japanese Journal of Applied Physics | - |
dc.citation.volume | 53 | - |
dc.citation.number | 3spec.1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | INSTABILITY MECHANISMS | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | TIME | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/6617789?arnumber=6617789&SID=EBSCO:edseee | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.