Write Recovery Time Degradation by Thermal Neutrons in DDR4 DRAM Components
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, Hyeongseok | - |
dc.contributor.author | Chun, Myungsun | - |
dc.contributor.author | Lee, Jiwon | - |
dc.contributor.author | Wen, Shi-Jie | - |
dc.contributor.author | Yu, Nick | - |
dc.contributor.author | Park, Byung-Gun | - |
dc.contributor.author | Baeg, Sanghyeon | - |
dc.date.accessioned | 2023-08-01T06:30:27Z | - |
dc.date.available | 2023-08-01T06:30:27Z | - |
dc.date.issued | 2023-05 | - |
dc.identifier.issn | 1541-7026 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/113569 | - |
dc.description.abstract | In this study, a thermal neutron (TN) radiation test was conducted for DRAM devices of 1y nm technology. Accordingly, the write recovery time (tWR) degradation was observed to range from 1-ns (degradation) to more than 15 ns (failure). Specifically, permanent timing degradation is expected, owing to secondary particles generated from the interactions of B-10 and TN. The samples from two manufacturers were compared and exhibited an 8.9 times maximum difference in the degradation cross-section. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IEEE | - |
dc.title | Write Recovery Time Degradation by Thermal Neutrons in DDR4 DRAM Components | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1109/IRPS48203.2023.10117935 | - |
dc.identifier.scopusid | 2-s2.0-85160425131 | - |
dc.identifier.wosid | 001007431500084 | - |
dc.identifier.bibliographicCitation | IEEE International Reliability Physics Symposium Proceedings, v.2023-March, pp 1 - 6 | - |
dc.citation.title | IEEE International Reliability Physics Symposium Proceedings | - |
dc.citation.volume | 2023-March | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.docType | Proceedings Paper | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | INDUCED SOFT ERRORS | - |
dc.subject.keywordPlus | HIGH-ENERGY | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordAuthor | Dynamic random-access memory (DRAM) | - |
dc.subject.keywordAuthor | write recovery time | - |
dc.subject.keywordAuthor | thermal neutron | - |
dc.subject.keywordAuthor | displacement damage | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/10117935?arnumber=10117935&SID=EBSCO:edseee | - |
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