Effect of nitrogen-doping on drain current modulation characteristics of an indium-gallium-zinc oxide thin-film transistor
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Beom, Keonwon | - |
dc.contributor.author | Kim, Minju | - |
dc.contributor.author | Lee, Hyerin | - |
dc.contributor.author | Kim, Hyung Jun | - |
dc.contributor.author | Cho, Seong-Yong | - |
dc.contributor.author | Lee, Hyun Ho | - |
dc.contributor.author | Kang, Chi Jung | - |
dc.contributor.author | Yoon, Tae-Sik | - |
dc.date.accessioned | 2023-08-07T07:31:24Z | - |
dc.date.available | 2023-08-07T07:31:24Z | - |
dc.date.issued | 2020-04 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.issn | 1361-6528 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/113721 | - |
dc.description.abstract | The effect of nitrogen-doping (N-doping) in an indium-gallium-zinc oxide (IGZO) channel layer on the analog, linear, and reversible drain current modulation in thin-film transistors (TFTs) with Al-top-gate/SiOx/TaOx/IGZO stack is investigated for potential application to artificial synaptic devices. The N-doped devices exhibit a more linear increase of drain current upon repeating positive gate biasing, corresponding to synaptic potentiation, while the undoped device shows a highly non-linear and abrupt increase of drain current. Distinct from the increase of drain current at positive biasing for potentiation, the decrease of drain current for depression behavior at negative biasing is found to be the same. Whereas the increase of drain current becomes more linear, the channel conductance, the magnitude of its change, and its changing speed are decreased by the N-doping. The partial replacement of oxygen with nitrogen, having higher binding energy with metal-cations, suppresses oxygen vacancy formation, then decreases the channel conductance. It also retards the migration of oxygen ions, then leads to a linear increase of drain current. These results reveal that the characteristics of tunable drain current such as its linearity, dynamic range, and speed could be controlled by altering the internal state of the IGZO channel, which is crucial for application to an artificial synapse in a neuromorphic system. © 2020 IOP Publishing Ltd. | - |
dc.format.extent | 9 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Institute of Physics Publishing | - |
dc.title | Effect of nitrogen-doping on drain current modulation characteristics of an indium-gallium-zinc oxide thin-film transistor | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1088/1361-6528/ab7fce | - |
dc.identifier.scopusid | 2-s2.0-85084272701 | - |
dc.identifier.wosid | 000528636300001 | - |
dc.identifier.bibliographicCitation | Nanotechnology, v.31, no.26, pp 1 - 9 | - |
dc.citation.title | Nanotechnology | - |
dc.citation.volume | 31 | - |
dc.citation.number | 26 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 9 | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordAuthor | drain current change | - |
dc.subject.keywordAuthor | IGZO | - |
dc.subject.keywordAuthor | nitrogen-doping | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.identifier.url | https://www.scopus.com/record/display.uri?eid=2-s2.0-85084272701&origin=inward&txGid=e9d13760719825b1273ea2ec7f063343#funding-details | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.