A Near-Infrared Enhanced Silicon Single-Photon Avalanche Diode With a Spherically Uniform Electric Field Peak
DC Field | Value | Language |
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dc.contributor.author | Van Sieleghem, Edward | - |
dc.contributor.author | Suss, Andreas | - |
dc.contributor.author | Boulenc, Pierre | - |
dc.contributor.author | Lee, Jiwon | - |
dc.contributor.author | Karve, Gauri | - |
dc.contributor.author | De Munck, Koen | - |
dc.contributor.author | Cavaco, Celso | - |
dc.contributor.author | Van Hoof, Chris | - |
dc.date.accessioned | 2023-08-16T07:31:01Z | - |
dc.date.available | 2023-08-16T07:31:01Z | - |
dc.date.issued | 2021-03 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.issn | 1558-0563 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/113778 | - |
dc.description.abstract | A near-infrared (NIR) enhanced silicon single-photon avalanche diode (SPAD) fabricated in a customized $0.13~\mu \text{m}$ CMOS technology is presented. The SPAD has a depleted absorption volume of approximately $15\,\,\mu \text{m}\,\,\times 15\,\,\mu \text{m}\,\,\times 18\,\,\mu \text{m}$. Electrons generated in the absorption region are efficiently transported by drift to a central active avalanche region with a diameter of $2~\mu \text{m}$. At the operating voltage, the active region contains a spherically uniform field peak, enabling the multiplication of electrons originating from all corners of the device. The advantages of the SPAD architecture include high NIR photon detection efficiency (PDE), drift-based transport, low afterpulsing, and compatibility with an integrated CMOS readout. A front-side illuminated device is fabricated and characterized. The SPAD has a PDE of 13% at wavelength 905 nm, an afterpulsing probability < 0.1% for a dead time of 13 ns, and a median dark count rate (DCR) of 840 Hz at room temperature. The device shows promising performance for time-of-flight applications that benefit from uniform NIR-sensitive SPAD arrays. © 1980-2012 IEEE. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | A Near-Infrared Enhanced Silicon Single-Photon Avalanche Diode With a Spherically Uniform Electric Field Peak | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1109/LED.2021.3070691 | - |
dc.identifier.scopusid | 2-s2.0-85103762086 | - |
dc.identifier.wosid | 000652794800025 | - |
dc.identifier.bibliographicCitation | IEEE Electron Device Letters, v.42, no.6, pp 879 - 882 | - |
dc.citation.title | IEEE Electron Device Letters | - |
dc.citation.volume | 42 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 879 | - |
dc.citation.endPage | 882 | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | SPAD | - |
dc.subject.keywordAuthor | CMOS integrated circuit | - |
dc.subject.keywordAuthor | near-infrared enhanced SPAD | - |
dc.subject.keywordAuthor | Single-photon avalanche diode (SPAD) | - |
dc.subject.keywordAuthor | spherically uniform field peak | - |
dc.subject.keywordAuthor | time-of-flight (ToF) | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/9393954?arnumber=9393954&SID=EBSCO:edseee | - |
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