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Infrared Colloidal Quantum Dot Image Sensors

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dc.contributor.authorPejovic, Vladimir-
dc.contributor.authorGeorgitzikis, Epimitheas-
dc.contributor.authorLee, Jiwon-
dc.contributor.authorLieberman, Itai-
dc.contributor.authorCheyns, David-
dc.contributor.authorHeremans, Paul-
dc.contributor.authorMalinowski, Pawel E.-
dc.date.accessioned2023-08-16T07:31:05Z-
dc.date.available2023-08-16T07:31:05Z-
dc.date.issued2022-06-
dc.identifier.issn0018-9383-
dc.identifier.issn1557-9646-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/113781-
dc.description.abstractQuantum dots (QDs) have been explored for many photonic applications, both as emitters and absorbers. Thanks to the bandgap tunability and ease of processing, they are prominent candidates to disrupt the field of imaging. This review article illustrates the state of technology for infrared image sensors based on colloidal QD absorbers. Up to now, this wavelength range has been dominated by III-V and II-VI imagers realized using flip-chip bonding. Monolithic integration of QDs with the readout chip promises to make short-wave infrared (SWIR) imaging accessible to applications that could previously not even consider this modality. Furthermore, QD sensors show already state-of-the-art figures of merit, such as sub-2- μm pixel pitch and multimegapixel resolution. External quantum efficiencies already exceed 60% at 1400 nm. With the potential to increase the spectrum into extended SWIR and even mid-wave infrared, QD imagers are a very interesting and dynamic technology segment. © 1963-2012 IEEE.-
dc.format.extent11-
dc.language영어-
dc.language.isoENG-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.titleInfrared Colloidal Quantum Dot Image Sensors-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/TED.2021.3133191-
dc.identifier.scopusid2-s2.0-85122077941-
dc.identifier.wosid000734084000001-
dc.identifier.bibliographicCitationIEEE Transactions on Electron Devices, v.69, no.6, pp 2840 - 2850-
dc.citation.titleIEEE Transactions on Electron Devices-
dc.citation.volume69-
dc.citation.number6-
dc.citation.startPage2840-
dc.citation.endPage2850-
dc.type.docType정기 학술지(Review)-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusEFFICIENCY-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordAuthorColloidal quantum dot (CQD) image sensors-
dc.subject.keywordAuthorinfrared imaging-
dc.subject.keywordAuthorlead sulfide (PbS)-
dc.subject.keywordAuthormercury telluride (HgTe)-
dc.subject.keywordAuthorshort-wave infrared (SWIR) image sensors-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9656610?arnumber=9656610&SID=EBSCO:edseee-
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