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Wideband 120-GHz CMOS I/Q Transmitter With Suppressed IMRR and LOFT for Wireless Short-Range High-Speed 6G IoT Applications

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dc.contributor.authorKim, Seung Hun-
dc.contributor.authorJang, Tae Hwan-
dc.contributor.authorKang, Dong Min-
dc.contributor.authorJung, Kyung Pil-
dc.contributor.authorPark, Chul Soon-
dc.date.accessioned2023-08-16T07:33:07Z-
dc.date.available2023-08-16T07:33:07Z-
dc.date.issued2023-07-
dc.identifier.issn2327-4662-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/113854-
dc.description.abstractIn this study, a wideband 120-GHz I/Q transmitter with suppressed image rejection ratio (IMRR) and LO feed through (LOFT) is presented using 40-nm complementary metal oxide semiconductor technology. For the up-conversion mixer, an NMOS/PMOS pair with resistive feedback is used during the transconductance stage to increase the input bandwidth with gain boosting, and a novel switching core without LO-RF coupling is used to suppress the LOFT effect. For the quadrature injection locked tripler, an I/Q calibration circuit is inserted to minimize the I/Q mismatch; accordingly, the measured IMRR is greatly improved. The peak conversion gain of the proposed transmitter was 10.8 dB, and the 3-dB gain bandwidth was 20 GHz. The measured IMD2 and IMD3 were above 40 dBc. Moreover, the IMRR was measured as 43.1 dBc, applying I/Q calibration. The measured LOFT was 33.7 dBc. The data rate of the proposed transmitter was measured up to 20 Gbps and at a distance of 5 cm. Subsequently, the error vector magnitudes were 13.4 dB for QPSK and -19.1 dB for 16-QAM modulation. It is expected that such wireless high-speed communication can be applied to wireless short-range high-speed 6G IoT applications.-
dc.format.extent10-
dc.language영어-
dc.language.isoENG-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleWideband 120-GHz CMOS I/Q Transmitter With Suppressed IMRR and LOFT for Wireless Short-Range High-Speed 6G IoT Applications-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/JIOT.2023.3243129-
dc.identifier.scopusid2-s2.0-85148446557-
dc.identifier.wosid001018925700045-
dc.identifier.bibliographicCitationIEEE Internet of Things Journal, v.10, no.13, pp 11739 - 11748-
dc.citation.titleIEEE Internet of Things Journal-
dc.citation.volume10-
dc.citation.number13-
dc.citation.startPage11739-
dc.citation.endPage11748-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaComputer Science-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaTelecommunications-
dc.relation.journalWebOfScienceCategoryComputer Science, Information Systems-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryTelecommunications-
dc.subject.keywordPlusANTIPODAL VIVALDI ANTENNA-
dc.subject.keywordPlusTO-CHIP COMMUNICATION-
dc.subject.keywordPlusPOWER-AMPLIFIER-
dc.subject.keywordPlusNM CMOS-
dc.subject.keywordPlusRECEIVER-
dc.subject.keywordPlusDESIGN-
dc.subject.keywordPlusTRANSCEIVER-
dc.subject.keywordPlusMIXER-
dc.subject.keywordAuthorGain-
dc.subject.keywordAuthorMixers-
dc.subject.keywordAuthorTransmitters-
dc.subject.keywordAuthorWireless communication-
dc.subject.keywordAuthorInternet of Things-
dc.subject.keywordAuthorRadio frequency-
dc.subject.keywordAuthorWideband-
dc.subject.keywordAuthor120-GHz-
dc.subject.keywordAuthor16-QAM-
dc.subject.keywordAuthor6G-
dc.subject.keywordAuthorcomplementary metal oxide semiconductor (CMOS)-
dc.subject.keywordAuthorD-band-
dc.subject.keywordAuthordistortion-
dc.subject.keywordAuthorInternet of Things (IoT)-
dc.subject.keywordAuthorSNDR-
dc.subject.keywordAuthortransmitter-
dc.subject.keywordAuthorwideband-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/10039062-
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ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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