Thermal Gradient During Vacuum-Deposition Dramatically Enhances Charge Transport in Organic Semiconductors: Toward High-Performance N-Type Organic Field-Effect Transistors
DC Field | Value | Language |
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dc.contributor.author | Kim, Joo Hyun | - |
dc.contributor.author | Han, Singu | - |
dc.contributor.author | Jeong, Heejeong | - |
dc.contributor.author | Jang, Hayeong | - |
dc.contributor.author | Baek, Seolhee | - |
dc.contributor.author | Hu, Junbeom | - |
dc.contributor.author | Lee, Myungkyun | - |
dc.contributor.author | Choi, Byungwoo | - |
dc.contributor.author | Lee, Hwa Sung | - |
dc.date.accessioned | 2021-06-22T15:22:09Z | - |
dc.date.available | 2021-06-22T15:22:09Z | - |
dc.date.created | 2021-01-22 | - |
dc.date.issued | 2017-02 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/11565 | - |
dc.description.abstract | A thermal gradient distribution was applied to a substrate during the growth of a vacuum-deposited n-type organic semiconductor (OSC) film prepared from N,N′-bis(2-ethylhexyl)-1,7-dicyanoperylene-3,4:9,10-bis(dicarboxyimide) (PDI-CN2), and the electrical performances of the films deployed in organic field-effect transistors (OFETs) were characterized. The temperature gradient at the surface was controlled by tilting the substrate, which varied the temperature one-dimensionally between the heated bottom substrate and the cooled upper substrate. The vacuum-deposited OSC molecules diffused and rearranged on the surface according to the substrate temperature gradient, producing directional crystalline and grain structures in the PDI-CN2 film. The morphological and crystalline structures of the PDI-CN2 thin films grown under a vertical temperature gradient were dramatically enhanced, comparing with the structures obtained from either uniformly heated films or films prepared under a horizontally applied temperature gradient. The field effect mobilities of the PDI-CN2-FETs prepared using the vertically applied temperature gradient were as high as 0.59 cm2 V-1 s-1, more than a factor of 2 higher than the mobility of 0.25 cm2 V-1 s-1 submitted to conventional thermal annealing and the mobility of 0.29 cm2 V-1 s-1 from the horizontally applied temperature gradient. © 2017 American Chemical Society. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | American Chemical Society | - |
dc.title | Thermal Gradient During Vacuum-Deposition Dramatically Enhances Charge Transport in Organic Semiconductors: Toward High-Performance N-Type Organic Field-Effect Transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Hwa Sung | - |
dc.identifier.doi | 10.1021/acsami.6b15981 | - |
dc.identifier.scopusid | 2-s2.0-85015998558 | - |
dc.identifier.wosid | 000397478100075 | - |
dc.identifier.bibliographicCitation | ACS Applied Materials and Interfaces, v.9, no.11, pp.9910 - 9917 | - |
dc.relation.isPartOf | ACS Applied Materials and Interfaces | - |
dc.citation.title | ACS Applied Materials and Interfaces | - |
dc.citation.volume | 9 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 9910 | - |
dc.citation.endPage | 9917 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | Crystalline materials | - |
dc.subject.keywordPlus | Deposition | - |
dc.subject.keywordPlus | Electric field effects | - |
dc.subject.keywordPlus | Film growth | - |
dc.subject.keywordPlus | Film preparation | - |
dc.subject.keywordPlus | Organic field effect transistors | - |
dc.subject.keywordPlus | Semiconducting organic compounds | - |
dc.subject.keywordPlus | Semiconductor growth | - |
dc.subject.keywordPlus | Substrates | - |
dc.subject.keywordPlus | Temperature | - |
dc.subject.keywordPlus | Thermal gradients | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | Transistors | - |
dc.subject.keywordPlus | Vacuum deposition | - |
dc.subject.keywordPlus | Electrical performance | - |
dc.subject.keywordPlus | Field-effect mobilities | - |
dc.subject.keywordPlus | Gradient distributions | - |
dc.subject.keywordPlus | N-type organic semiconductor | - |
dc.subject.keywordPlus | Substrate temperature | - |
dc.subject.keywordPlus | Thermal distributions | - |
dc.subject.keywordPlus | Thermal-annealing | - |
dc.subject.keywordPlus | Vertical temperature gradients | - |
dc.subject.keywordPlus | Field effect transistors | - |
dc.subject.keywordAuthor | gradient thermal distribution | - |
dc.subject.keywordAuthor | n-type organic semiconductor | - |
dc.subject.keywordAuthor | organic field-effect transistor | - |
dc.subject.keywordAuthor | thermal annealing | - |
dc.subject.keywordAuthor | vacuum deposition | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.6b15981 | - |
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