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In-line atomic resolution local nanotopography variation metrology for CMP process

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dc.contributor.authorKim, Tae-Gon-
dc.contributor.authorHeylen, Nancy-
dc.contributor.authorKim, Soon-Wook-
dc.contributor.authorVandeweyer, Tom-
dc.contributor.authorJo, Ah-Jin-
dc.contributor.authorLee, Ju Suk-
dc.contributor.authorAhn, Byoung-Woon-
dc.contributor.authorCho, Sang-Joon-
dc.contributor.authorPark, Sang-Il-
dc.contributor.authorIrmer, Bernd-
dc.contributor.authorSchmidt, Sebastian-
dc.date.accessioned2021-06-22T15:23:12Z-
dc.date.available2021-06-22T15:23:12Z-
dc.date.created2021-01-22-
dc.date.issued2017-10-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/11615-
dc.description.abstractWe demonstrated fully automated in-line atomic force microscopy (AFM) as local nanotopography variation metrology for CMP process control. Two use cases, which are Fin CMP process in SADP Fin process and Cu pad CMP process in wafer-to-wafer hybrid bonding process were evaluated in order to evaluate in-line AFM capability as a metrology solution for process development and in-line process monitoring. In-line AFM provides not only visual information of nanotopography, which could lead to quick decision making, but also to quantitative information of local height variation where other metrology solutions could not have provided. In-line AFM could provide many advantages, which are nondestructive measurement, sub-nanometer accuracy and long term reliability. Those advantages help learning cycle and process quality to enhance. © VDE VERLAG GMBH Berlin Offenbach-
dc.language영어-
dc.language.isoen-
dc.publisherVDE Verlag GmbH-
dc.titleIn-line atomic resolution local nanotopography variation metrology for CMP process-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Tae-Gon-
dc.identifier.scopusid2-s2.0-85046406061-
dc.identifier.bibliographicCitationICPT 2017 - International Conference on Planarization/CMP Technology, pp.77 - 82-
dc.relation.isPartOfICPT 2017 - International Conference on Planarization/CMP Technology-
dc.citation.titleICPT 2017 - International Conference on Planarization/CMP Technology-
dc.citation.startPage77-
dc.citation.endPage82-
dc.type.rimsART-
dc.type.docTypeConference Paper-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusAtomic force microscopy-
dc.subject.keywordPlusDecision making-
dc.subject.keywordPlusFins (heat exchange)-
dc.subject.keywordPlusNanotechnology-
dc.subject.keywordPlusNondestructive examination-
dc.subject.keywordPlusProcess control-
dc.subject.keywordPlusProcess monitoring-
dc.subject.keywordPlusAtomic resolution-
dc.subject.keywordPlusHeight variation-
dc.subject.keywordPlusInline process monitoring-
dc.subject.keywordPlusNanotopographies-
dc.subject.keywordPlusNon-destructive measurement-
dc.subject.keywordPlusProcess development-
dc.subject.keywordPlusQuantitative information-
dc.subject.keywordPlusVisual information-
dc.subject.keywordPlusWafer bonding-
dc.subject.keywordAuthor3D interconnect-
dc.subject.keywordAuthorAtomic force microscopy-
dc.subject.keywordAuthorFinFET-
dc.subject.keywordAuthorHigh density carbon tip-
dc.subject.keywordAuthorIn-line metrology-
dc.subject.keywordAuthorLocal variation-
dc.subject.keywordAuthorLogic-
dc.subject.keywordAuthorNanotopography-
dc.subject.keywordAuthorProcess control-
dc.subject.keywordAuthorWafer-to-wafer hybrid bonding-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8237955-
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ERICA 공학대학 (MAJOR IN APPLIED MATERIAL & COMPONENTS)
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