In-line atomic resolution local nanotopography variation metrology for CMP process
DC Field | Value | Language |
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dc.contributor.author | Kim, Tae-Gon | - |
dc.contributor.author | Heylen, Nancy | - |
dc.contributor.author | Kim, Soon-Wook | - |
dc.contributor.author | Vandeweyer, Tom | - |
dc.contributor.author | Jo, Ah-Jin | - |
dc.contributor.author | Lee, Ju Suk | - |
dc.contributor.author | Ahn, Byoung-Woon | - |
dc.contributor.author | Cho, Sang-Joon | - |
dc.contributor.author | Park, Sang-Il | - |
dc.contributor.author | Irmer, Bernd | - |
dc.contributor.author | Schmidt, Sebastian | - |
dc.date.accessioned | 2021-06-22T15:23:12Z | - |
dc.date.available | 2021-06-22T15:23:12Z | - |
dc.date.created | 2021-01-22 | - |
dc.date.issued | 2017-10 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/11615 | - |
dc.description.abstract | We demonstrated fully automated in-line atomic force microscopy (AFM) as local nanotopography variation metrology for CMP process control. Two use cases, which are Fin CMP process in SADP Fin process and Cu pad CMP process in wafer-to-wafer hybrid bonding process were evaluated in order to evaluate in-line AFM capability as a metrology solution for process development and in-line process monitoring. In-line AFM provides not only visual information of nanotopography, which could lead to quick decision making, but also to quantitative information of local height variation where other metrology solutions could not have provided. In-line AFM could provide many advantages, which are nondestructive measurement, sub-nanometer accuracy and long term reliability. Those advantages help learning cycle and process quality to enhance. © VDE VERLAG GMBH Berlin Offenbach | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | VDE Verlag GmbH | - |
dc.title | In-line atomic resolution local nanotopography variation metrology for CMP process | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae-Gon | - |
dc.identifier.scopusid | 2-s2.0-85046406061 | - |
dc.identifier.bibliographicCitation | ICPT 2017 - International Conference on Planarization/CMP Technology, pp.77 - 82 | - |
dc.relation.isPartOf | ICPT 2017 - International Conference on Planarization/CMP Technology | - |
dc.citation.title | ICPT 2017 - International Conference on Planarization/CMP Technology | - |
dc.citation.startPage | 77 | - |
dc.citation.endPage | 82 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Atomic force microscopy | - |
dc.subject.keywordPlus | Decision making | - |
dc.subject.keywordPlus | Fins (heat exchange) | - |
dc.subject.keywordPlus | Nanotechnology | - |
dc.subject.keywordPlus | Nondestructive examination | - |
dc.subject.keywordPlus | Process control | - |
dc.subject.keywordPlus | Process monitoring | - |
dc.subject.keywordPlus | Atomic resolution | - |
dc.subject.keywordPlus | Height variation | - |
dc.subject.keywordPlus | Inline process monitoring | - |
dc.subject.keywordPlus | Nanotopographies | - |
dc.subject.keywordPlus | Non-destructive measurement | - |
dc.subject.keywordPlus | Process development | - |
dc.subject.keywordPlus | Quantitative information | - |
dc.subject.keywordPlus | Visual information | - |
dc.subject.keywordPlus | Wafer bonding | - |
dc.subject.keywordAuthor | 3D interconnect | - |
dc.subject.keywordAuthor | Atomic force microscopy | - |
dc.subject.keywordAuthor | FinFET | - |
dc.subject.keywordAuthor | High density carbon tip | - |
dc.subject.keywordAuthor | In-line metrology | - |
dc.subject.keywordAuthor | Local variation | - |
dc.subject.keywordAuthor | Logic | - |
dc.subject.keywordAuthor | Nanotopography | - |
dc.subject.keywordAuthor | Process control | - |
dc.subject.keywordAuthor | Wafer-to-wafer hybrid bonding | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/8237955 | - |
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