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Reliability of coplanar oxide TFTs: Analysis and improvement

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dc.contributor.authorBaeck, Ju heyuck-
dc.contributor.authorOh, Saeroonter-
dc.contributor.authorLee, Dohyung-
dc.contributor.authorPark, Taeuk park-
dc.contributor.authorBae, Jong uk-
dc.contributor.authorPark, Kwon shik-
dc.contributor.authorYoon, Sooyong-
dc.contributor.authorKang, Inbyeong-
dc.date.accessioned2021-06-22T15:23:27Z-
dc.date.available2021-06-22T15:23:27Z-
dc.date.created2021-01-22-
dc.date.issued2017-05-
dc.identifier.issn0097-966X-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/11626-
dc.description.abstractWe confirm that, the PBTS instability, of coplanar, InGaZnO TFTs can be improved, through the minimization of Non-Bridging Oxygen Vole Centers (NBOHC) and, optimization of hydrogen passivation in the GI/ACT interface region. The quantitative analysis of hydrogen and, oxygen in each region are obtained from physical property measurements. Trap density in GI/ACT interface layer is obtained by photonic capacitance-voltage measurements which are correlated, with PBTS characteristics. A decrease of under, coordinated bonding states lessens electron trap density, which brings improvement, in PBTS from Vth = 2.61V to 0.21V by process optimization. © (2017) by SID-the Society for Information Display. All rights reserved.-
dc.language영어-
dc.language.isoen-
dc.publisherBlackwell Publishing Ltd-
dc.titleReliability of coplanar oxide TFTs: Analysis and improvement-
dc.typeArticle-
dc.contributor.affiliatedAuthorOh, Saeroonter-
dc.identifier.doi10.1002/sdtp.11611-
dc.identifier.scopusid2-s2.0-85040919578-
dc.identifier.bibliographicCitationDigest of Technical Papers - SID International Symposium, v.48, no.1, pp.294 - 296-
dc.relation.isPartOfDigest of Technical Papers - SID International Symposium-
dc.citation.titleDigest of Technical Papers - SID International Symposium-
dc.citation.volume48-
dc.citation.number1-
dc.citation.startPage294-
dc.citation.endPage296-
dc.type.rimsART-
dc.type.docTypeConference Paper-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusCapacitance-
dc.subject.keywordPlusGallium compounds-
dc.subject.keywordPlusHydrogen-
dc.subject.keywordPlusOptimization-
dc.subject.keywordPlusOxygen-
dc.subject.keywordPlusPassivation-
dc.subject.keywordPlusReliability analysis-
dc.subject.keywordPlusRubidium-
dc.subject.keywordPlusSemiconducting indium compounds-
dc.subject.keywordPlusZinc compounds-
dc.subject.keywordPlusA-IGZO-
dc.subject.keywordPlusC-V method-
dc.subject.keywordPlusCoplanar-
dc.subject.keywordPlusERDA-
dc.subject.keywordPlusInterface trap density-
dc.subject.keywordPlusOxide tft-
dc.subject.keywordPlusPBTS-
dc.subject.keywordPlusTop gate-
dc.subject.keywordPlusThin film transistors-
dc.subject.keywordAuthorA-IGZO-
dc.subject.keywordAuthorCoplanar-
dc.subject.keywordAuthorERDA-
dc.subject.keywordAuthorInterface trap density (Dit)-
dc.subject.keywordAuthorOxide TFT-
dc.subject.keywordAuthorPBTS-
dc.subject.keywordAuthorPhto C-V method-
dc.subject.keywordAuthorRBS-
dc.subject.keywordAuthorTop-gate-
dc.subject.keywordAuthorXRR-
dc.identifier.urlhttps://sid.onlinelibrary.wiley.com/doi/10.1002/sdtp.11611-
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