Effect of mechanical stress on the stability of flexible InGaZnO thin-film transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, Hyun-Jun | - |
dc.contributor.author | Han, Ki-Lim | - |
dc.contributor.author | Ok, Kyung-Chul | - |
dc.contributor.author | Lee, Hyun-Mo | - |
dc.contributor.author | Oh, Saeroonter | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.date.accessioned | 2021-06-22T15:25:33Z | - |
dc.date.available | 2021-06-22T15:25:33Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2017-06 | - |
dc.identifier.issn | 1598-0316 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/11729 | - |
dc.description.abstract | Demonstrated herein is the effect of mechanical stress on the device performance and stability of amorphous indium-gallium-zinc oxide thin-film transistors (TFTs) on a flexible polyimide substrate. Flexible TFTs were placed on jigs with various bending radii to apply different degrees of mechanical strain on them. When the tensile strain on the TFTs was increased from 0.19% to 0.93%, the threshold voltage shifted after a 10,000 s increase in bias-temperature-stress (BTS), under vacuum conditions. The BTS instability was further exacerbated when the device was exposed to the air ambient at a 0.93% strain. The device reliability deteriorated due to the increase in the subgap density of states as well as the enhanced ambient effects via the strain-induced gas permeation paths. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | TAYLOR & FRANCIS LTD | - |
dc.title | Effect of mechanical stress on the stability of flexible InGaZnO thin-film transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Oh, Saeroonter | - |
dc.identifier.doi | 10.1080/15980316.2017.1294116 | - |
dc.identifier.scopusid | 2-s2.0-85014661196 | - |
dc.identifier.wosid | 000406427000005 | - |
dc.identifier.bibliographicCitation | JOURNAL OF INFORMATION DISPLAY, v.18, no.2, pp.87 - 91 | - |
dc.relation.isPartOf | JOURNAL OF INFORMATION DISPLAY | - |
dc.citation.title | JOURNAL OF INFORMATION DISPLAY | - |
dc.citation.volume | 18 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 87 | - |
dc.citation.endPage | 91 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002235111 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | BIAS STABILITY | - |
dc.subject.keywordAuthor | Mechanical stress | - |
dc.subject.keywordAuthor | a-IGZO thin-film transistor | - |
dc.subject.keywordAuthor | polyimide substrate | - |
dc.subject.keywordAuthor | device degradation | - |
dc.identifier.url | https://www.tandfonline.com/doi/full/10.1080/15980316.2017.1294116 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.